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参数资料
| 型号： | MPQ3725 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 40 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR, TO-116 |
| 封装： | PLASTIC, DIP-14 |
| 文件页数： | 1/35页 |
| 文件大小： | 353K |
| 代理商： | MPQ3725 |
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2–482
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Quad Core Driver Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
40
Vdc
Collector – Emitter Voltage
VCES
60
Vdc
Emitter – Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
IC
1.0
Adc
One
Transistor
Four
Transistors
Equal Power
Total Device Dissipation
@ TA = 25°C
Derate above 25
°C
PD
1.0
8.0
2.5
20
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
One
Transistor
Effective
For Four
Transistors
Thermal Resistance,
Junction to Ambient(1)
RqJA
125
50
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
40
—
Vdc
Collector – Emitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
V(BR)CES
60
—
Vdc
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
—
Vdc
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
ICBO
—
0.5
mAdc
1. RqJA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MPQ3725
Motorola Preferred Device
CASE 646–06, STYLE 1
TO–116
1
14
12
3
4
5
6
7
14
13
12
11
10
9
8
NPN
REV 3
相关PDF资料 |
PDF描述 |
|---|---|
| MPQ3762 | 1.5 A, 40 V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-116 |
| MPQ3798 | 50 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-116 |
| MPQ3906 | 200 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-116 |
| MPQ6001 | 0.5 A, 30 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, TO-116 |
| MPQ6002 | 0.5 A, 30 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, TO-116 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MPQ3725A | 功能描述:两极晶体管 - BJT NPN Quad Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPQ3762 | 制造商:Motorola Inc 功能描述: |
| MPQ3798 | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:PNP SILICON QUAD TRANSISTOR |
| MPQ3799 | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:PNP SILICON QUAD TRANSISTOR |
| MPQ3904 | 制造商:Central Semiconductor Corp 功能描述:MPQ Series 40 V 200 mA NPN Through Hole Silicon Quad Transistor - TO-116 制造商:CENTRAL SEMICONDUCTOR 功能描述:MPQ Series 40 V 200 mA NPN Through Hole Silicon Quad Transistor - TO-116 |
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