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参数资料
| 型号： | MPSW45RLRA |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-10, TO-226AE, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 188K |
| 代理商： | MPSW45RLRA |
One Watt Darlington
Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
MPSW45
MPSW45A
Unit
Collector–Emitter Voltage
VCES
40
50
Vdc
Collector–Base Voltage
VCBO
50
60
Vdc
Emitter–Base Voltage
VEBO
12
Vdc
Collector Current — Continuous
IC
1.0
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
1.0
8.0
Watts
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
2.5
20
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 100 Adc, VBE = 0)
MPSW45
MPSW45A
V(BR)CES
40
50
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MPSW45
MPSW45A
V(BR)CBO
50
60
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
12
—
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
MPSW45
(VCB = 40 Vdc, IE = 0)
MPSW45A
ICBO
—
100
nAdc
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO
—
100
nAdc
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1
912
Publication Order Number:
MPSW45/D
MPSW45
MPSW45A
CASE 29–10, STYLE 1
TO–92 (TO–226AE)
1
2
3
*
*ON Semiconductor Preferred Device
COLLECTOR 3
BASE
2
EMITTER 1
相关PDF资料 |
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| MPSW45ARLRM | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSW45ARLRE | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSW45ARLRB | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSW45RL | 1000 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSW45RL1 | 1000 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MPSW45RLRE | 功能描述:达林顿晶体管 1A 50V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MPSW45RLREG | 功能描述:达林顿晶体管 1A 50V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MPSW51 | 功能描述:两极晶体管 - BJT 1A 40V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPSW51_10 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:One Watt High Current Transistors |
| MPSW51A | 功能描述:两极晶体管 - BJT 1A 50V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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