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参数资料
| 型号： | MR756G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/7页 |
| 文件大小： | 96K |
| 描述： | DIODE STD REC 6A 600V AXIAL |
| 产品变化通告： | Product Discontinuation 21/Jun/2007 |
| 标准包装： | 1,000 |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 600V |
| 电流 - 平均整流 (Io)： | 6A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 900mV @ 6A |
| 速度： | 标准恢复 >500ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 25µA @ 600V |
| 安装类型： | 通孔 |
| 封装/外壳： | 按钮，轴向 |
| 供应商设备封装： | Microde 按钮 |
| 包装： | 散装 |
| 其它名称： | MR756GOS |
MR750 SERIES
http://onsemi.com
3
Figure 1. Forward Voltage
Figure 2. Maximum Surge Capability
Figure 3. Forward Voltage Temperature Coefficient
Figure 4. Typical Transient Thermal Resistance
0.8 1.0 1.4 1.6 2.0 2.21.8 2.4
0.6
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
700
500
20
50
10
i
F
, INSTANTANEOUS FORWARD CURRENT (AMP)
5.0
2.0
1.0
1.2
2.6
7.0
100
70
0.2
0.5
0.7
200
30
3.0
0.3
300
MAXIMUM
TYPICAL
TJ
= 25
°C
NUMBER OF CYCLES AT 60 Hz
100
60
1.0
300
100
80
I
2.0 5.0 10 20 50
200
400
600
, PEAK HALF WAVE CURRENT (AMP)
FSM
TJ
= 175
°C
25°C
VRRM
MAY BE APPLIED BETWEEN
EACH CYCLE OF SURGE. THE TJ
NOTED IS TJ
PRIOR TO SURGE
iF, INSTANTANEOUS FORWARD CURRENT (AMP)
0.5 5.0 501.0
?2.0
0.2
+0.5
0
?0.5
?1.0
?1.5
2.0
°
COEFFICIENT (mV/ C)
10 20 100 200
TYPICAL RANGE
t, TIME (SECONDS)
0.1 0.2 0.3 0.5 0.7 3.0 301.0
7.0 70
10
1.0
0.2
2.0 5.0 10 20 50
5.0
20
R
3.0
2.0
0.5
0.3
Both leads to heat sink, with lengths as shown. Variations in RJL(t)
below 2.0 seconds are independent of lead connections of 1/8 inch
or greater, and vary only about ±20% from the values shown. Val-
ues for times greater than 2.0 seconds may be obtained by drawing
a curve, with the end point (at 70 seconds) taken from Figure 8, or
calculated from the notes, using the given curves as a guide. Either
typical or maximum values may be used. For RJL(t)values at pulse
widths less than 0.1 second, the above curve can be extrapolated
down to 10 s at a continuing slope.
THERMAL RESISTANCE ( C/W)
175°C
25°C
1/2"
3/8"
1/4"
1/8"
, JUNCTION?TO?LEAD TRANSIENT
JL(t)
θ
°
HEAT SINK
L
L
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MR756G | 制造商:ON Semiconductor 功能描述:Fast Recovery Power Rectifier |
| MR756RL | 功能描述:整流器 600V 6A Silicon RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MR756RLG | 功能描述:整流器 600V 6A Silicon RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MR756-T3 | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:6.0A STANDARD DIODE |
| MR758 | 制造商:Solid State Devices Inc (SSDI) 功能描述:Diffused Junction Silicon Transistor |
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