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参数资料
| 型号： | MR756G |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/7页 |
| 文件大小： | 96K |
| 描述： | DIODE STD REC 6A 600V AXIAL |
| 产品变化通告： | Product Discontinuation 21/Jun/2007 |
| 标准包装： | 1,000 |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 600V |
| 电流 - 平均整流 (Io)： | 6A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 900mV @ 6A |
| 速度： | 标准恢复 >500ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 25µA @ 600V |
| 安装类型： | 通孔 |
| 封装/外壳： | 按钮，轴向 |
| 供应商设备封装： | Microde 按钮 |
| 包装： | 散装 |
| 其它名称： | MR756GOS |
MR750 SERIES
http://onsemi.com
4
Figure 5. Maximum Current Ratings
TL, LEAD TEMPERATURE (°C)
0
0
8.0
I
F(AV)
12
20
28
20 60 100 140 18040 80 120 160 200
Figure 6. Maximum Current Ratings
0
0 8.04.0 12 20 28
4.0
16 24 32
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
P
F(AV)
Figure 7. Power Dissipation
, POWER DISSIPATION (WATTS)
5/8"
, AVERAGE FORWARD CURRENT (AMPS)
CAPACITANCE LOADS
8.0
12
16
RESISTIVE INDUCTIVE
LOADS
TA, AMBIENT TEMPERATURE (°C)
0
0
1.0
I
F(AV)
2.0
3.0
4.0
20 60 100 140 18040 80 120 160 200
Figure 8. Steady State Thermal Resistance
f = 60 Hz
, AVERAGE FORWARD CURRENT (AMPS)
RESISTIVE INDUCTIVE LOADS
CAPACITANCE LOADS ? 1
& 3
20
6
1
& 3
20 Iavg
TA(A)
TA(K)
TL(A)
TC(A)
TJ
TC(K)
TL(K)
PF
RS(A)
RL(A)
RJ(A)
RJ(K)
RL(K)
RS(K)
Use of the above model permits junction to lead thermal resistance for
any mounting configuration to be found. Lowest values occur when one
side of the rectifier is brought as close as possible to the heat sink as
shown below. Terms in the model signify:
TA
= Ambient Temperature T
C
= Case Temperature
TL
= Lead Temperature T
J
= Junction Temperature
RS
= Thermal Resistance, Heat Sink to Ambient
RL
= Thermal Resistance, Lead to Heat Sink
RJ
= Thermal Resistance, Junction to Case
PF
= Power Dissipation
(Subscripts A and K refer to anode and cathode sides, respectively.)
Values for thermal resistance components are:
RL
= 40
°C/W/in. Typically and 44°C/W/in Maximum.
RJ
= 2
°C/W typically and 4°C/W Maximum.
Since R
J
is so low, measurements of the case temperature, T
C, will be
approximately equal to junction temperature in practical lead mounted
applications. When used as a 60 Hz rectifierm the slow thermal response
holds TJ(PK)
close to T
J(AVG). Therefore maximum lead temperature may
be found from: TL
= 175
°?RJL
P
F. PF
may be found from Figure 7.
The recommended method of mounting to a P.C. board is shown on the
sketch, where RJA
is approximately 25
°C/W for a 1?1/2" x 1?1/2" copper
surface area. Values of 40°C/W are typical for mounting to terminal strips
or P.C. boards where available surface area is small.
Board Ground Plane
Recommended mounting for half wave circuit
24
28
32
0
0 1/41/8 3/8 5/8 7/8
5.0
1/2 3/4 1.0
L, LEAD LENGTH (INCHES)
R
JL
, THERMAL RESISTANCE,
SINGLE LEAD TO HEAT SINK,
INSIGNIFICANT HEAT FLOW
THROUGH OTHER LEAD
10
15
20
25
30
35
40
24
16
4.0
θ
JUNCTION?TO?LEAD( C/W)
°
BOTH LEADS TO HEAT
SINK WITH LENGTHS
AS SHOWN
3/8"
1/4"
L = 1/8"
5.0
6.0
7.0
I(pk)
= 5 I
avg
I(pk)
= 10 I
avg
I(pk)
= 20 I
avg
10 Iavg
I(pk)
= 5 I
avg
RESISTIVE ? INDUCTIVE LOADS
BOTH LEADS TO HEAT
SINK, EQUAL LENGTH
6
(I
PK/IAVE
= 6.28)
SEE NOTE
RJA
= 40
°C/W
SEE NOTE
RJA
= 25
°C/W
NOTES
THERMAL CIRCUIT MODEL
(For Heat Conduction Through The Leads)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MR756G | 制造商:ON Semiconductor 功能描述:Fast Recovery Power Rectifier |
| MR756RL | 功能描述:整流器 600V 6A Silicon RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MR756RLG | 功能描述:整流器 600V 6A Silicon RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MR756-T3 | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:6.0A STANDARD DIODE |
| MR758 | 制造商:Solid State Devices Inc (SSDI) 功能描述:Diffused Junction Silicon Transistor |
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