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参数资料
| 型号： | MR756G |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/7页 |
| 文件大小： | 96K |
| 描述： | DIODE STD REC 6A 600V AXIAL |
| 产品变化通告： | Product Discontinuation 21/Jun/2007 |
| 标准包装： | 1,000 |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 600V |
| 电流 - 平均整流 (Io)： | 6A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 900mV @ 6A |
| 速度： | 标准恢复 >500ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 25µA @ 600V |
| 安装类型： | 通孔 |
| 封装/外壳： | 按钮，轴向 |
| 供应商设备封装： | Microde 按钮 |
| 包装： | 散装 |
| 其它名称： | MR756GOS |
MR750 SERIES
http://onsemi.com
5
Figure 9. Rectification Efficiency Figure 10. Reverse Recovery Time
REPETITION FREQUENCY (kHz)
2.0
20
1.0
100
50
30
3.0 5.0 1007.0 10 20 30 50
70
RELATIVE EFFICIENCY (%)
70
TJ
= 25
°C
CURRENT INPUT WAVEFORM
IR/IF, RATIO OF REVERSE TO FORWARD CURRENT
0.2
0.1
20
7.0
5.0
2.0
1.0
0.3 0.5 100.7 1.0 2.0 3.0 5.0
7.0
3.0
t
rr
, REVERSE RECOVERY TIME ( s)
10
TJ
= 25
°C
IF
= 5 A
3 A
1 A
IF
0
IR
trr
Figure 11. Junction Capacitance Figure 12. Forward Recovery Time
VR, REVERSE VOLTAGE (VOLTS)
10
1.0 3.02.0
500
300
200
100
70
50
C, CAPACITANCE (pF)
5.0 507.0
10 20 10030
70
TJ
= 25
°C
0.1
1.0
IF, FORWARD PULSE CURRENT (AMP)
0.7
0.5
0.3
0.2
2.0
, FORWARD RECOVERY TIME ( s)
t
fr
5.0
3.0
1.0
7.0 10
fr
= 1.0 V
TJ
= 25
°C
fr
f
tfr
TJ
= 175
°C
30
700
1000
30
20
fr
= 2.0 V
RS
RL
VO
Figure 13. Single?Phase Half?Wave
Rectifier Circuit
The rectification efficiency factor σ
shown in Figure 9
was calculated using the formula:
σ
P(dc)
P
(rms)
V2o(rms).100%
R
V2o(ac)
V2o(dc)
.100%
L
V2o(dc)
RL
V2o(dc)
(1)
For a sine wave input Vm
sin (wt) to the diode, assumed
lossless, the maximum theoretical
efficiency factor becomes:
σ(sine)
V2m
.100%
4
π2
.100%
40.6% (2)
V2m
2RL
4RL
For a square wave input of amplitude Vm, the efficiency
factor becomes:
σ(square)
RL
V2m.100%
50% (3)
V2m
2
RL
(A full wave circuit has twice these efficiencies)
As the frequency of the input signal is increased, the
reverse recovery time of the diode (Figure 10) becomes
significant, resulting in an increasing AC voltage
component across RL
which is opposite in polarity to the
forward current, thereby reducing the value of the efficiency
factor σ, as shown on Figure 9.
It should be emphasized that Figure 9 shows waveform
efficiency only; it does not provide a measure of diode
losses. Data was obtained by measuring the AC component
of Vo
with a true rms AC voltmeter and the DC component
with a DC voltmeter. The data was used in Equation 1 to
obtain points for Figure 9.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MR756G | 制造商:ON Semiconductor 功能描述:Fast Recovery Power Rectifier |
| MR756RL | 功能描述:整流器 600V 6A Silicon RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MR756RLG | 功能描述:整流器 600V 6A Silicon RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MR756-T3 | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:6.0A STANDARD DIODE |
| MR758 | 制造商:Solid State Devices Inc (SSDI) 功能描述:Diffused Junction Silicon Transistor |
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