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参数资料
| 型号： | MRAL2023-18 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | FM-2 |
| 文件页数： | 1/1页 |
| 文件大小： | 25K |
| 代理商： | MRAL2023-18 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CES
I
C
= 160 mA
BV
EBO
I
E
= 2.0 mA
I
CBO
V
CB
= 22 V
h
FE
V
CE
= 5.0 V
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
42
UNITS
V
3.5
V
4.0
mA
I
C
= 800 mA
10
100
---
P
G
η
C
V
CE
= 22 V f = 2000 - 2300 MHz P
OUT
= 18.0 W
7.0
35
dB
%
NPN SILICON RF POWER TRANSISTOR
MRAL2023-18
PACKAGE STYLE .250 2L FLG (C)
MINIMUM
Inches/mm
.095/2.41
MAXIMUM
Inches/mm
.105/2.67
A
B
C
D
E
F
G
H
I
J
K
L
0125/3.18
.380/9.65
.780/19.81
.392/9.96
.645/16.38
.895/22.73
.002/0.05
.055/1.40
.105/2.67
.392/.408
.390/9.91
.408/10.36
.655/16.64
.905/22.99
.006/0.15
.065/1.65
.130/3.30
.230/5.84
.408/10.36
DESCRIPTION:
The
ASI MRAL2023-18
is a
Common Base Device Designed for
Class C Amplifier Applications in L-
Band FM Microwave Links.
FEATURES INCLUDE:
Gold Metalization
Emitter Ballasting
Input/Output Matching
MAXIMUM RATINGS
I
C
4.0 A
V
CES
42 V
P
DISS
70 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
2.5 °C/W
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