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参数资料
| 型号： | MRAL2023-6 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | FM-2 |
| 文件页数： | 1/1页 |
| 文件大小： | 14K |
| 代理商： | MRAL2023-6 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CES
I
C
= 50 mA
BV
EBO
I
E
= 1.0 mA
I
CBO
V
CB
= 22 V
h
FE
V
CE
= 5.0 V
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
40
UNITS
V
3.5
V
1.25
mA
I
C
= 500 mA
10
90
---
C
OB
V
CB
= 22 V
f = 1.0 MHz
10
pF
P
G
η
C
V
CE
= 22 V P
OUT
= 6.0 W f = 2000 to 2300 MHz
6.8
40
dB
%
NPN SILICON RF POWER TRANSISTOR
MRAL2023-6
DESCRIPTION:
The
ASI MRAL2023-6
is a Common
Base Device Designed for class C
Amplifier Applications in L-Band FM
Microwave Links.
FEATURES INCLUDE:
PACKAGE STYLE .250 2L FLG (C)
1 = COLLECTOR 2 = BASE
3 = EMITTER
Gold Metallization
Emitter Ballasting
Input Matching
MAXIMUM RATINGS
I
C
1.25 A
V
CES
40 V
P
DISS
21 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
8.0 °C/W
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