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参数资料
| 型号： | MRF154 |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | CASE 368-03, HOGPAC-2 |
| 文件页数： | 2/7页 |
| 文件大小： | 175K |
| 代理商： | MRF154 |
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA)
V(BR)DSS
125
—
Vdc
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0)
IDSS
—
20
mAdc
Gate–Body Leakage Current (VGS = 20 V, VDS = 0)
IGSS
—
5.0
Adc
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
VGS(th)
1.0
3.0
5.0
Vdc
Drain–Source On–Voltage (VGS = 10 V, ID = 40 A)
VDS(on)
1.0
3.0
5.0
Vdc
Forward Transconductance (VDS = 10 V, ID = 20 A)
gfs
16
20
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Ciss
—
1600
—
pF
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Coss
—
950
—
pF
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Crss
—
175
—
pF
FUNCTIONAL TESTS
Common Source Amplifier Power Gain
(VDD = 50 V, Pout = 600 W, IDQ = 800 mA, f = 30 MHz)
Gps
—
17
—
dB
Drain Efficiency
(VDD = 50 V, Pout = 600 W, IDQ = 800 mA, f = 30 MHz)
η
—
45
—
%
Intermodulation Distortion
(VDD = 50 V, Pout = 600 W (PEP),
f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 800 mA)
IMD(d3)
—
–25
—
dB
Figure 1. 30 MHz Test Circuit
C1, C3, C8 — Arco 469
C2 — 330 pF
C4 — 680 pF
C5, C19, C20 — 0.47
F, RMC Type 2225C
C6, C7, C14, C15, C16 — 0.1
F
C9, C10, C11 — 470 pF
C12 — 1000 pF
C13 — Two Unencapsulated 1000 pF Mica, in Series
C17, C18 — 0.039
F
C21 — 10
F/100 V Electrolytic
L1 — 2 Turns #16 AWG, 1/2
″ ID, 3/8″ Long
L2, L3 — Ferrite Beads, Fair–Rite Products Corp. #2673000801
All capacitors ATC type 100/200 chips or equivalent unless otherwise noted.
R1, R2 — 10 Ohms/2.0 W Carbon
T1 — RF Transformer, 1:25 Impedance Ratio. See M/A-COM
T1 — Application Note AN749, Figure 4 for details.
T1 — Ferrite Material: 2 Each, Fair–Rite Products
T1 — Corp. #2667540001
R1
C5
C6
R2
DUT
C4
C1
C2
C3
L1
C7
RF
INPUT
RF
OUTPUT
+
–
0–6 V
+
–
50 V
C14
C15
C16
C17
C18
C19
L2
L3
C20
C21
C9
C10
C11
C12
C13
C8
T1
2
REV 2
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PDF描述 |
|---|---|
| MRF157 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF158R | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| MRF158R | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| MRF16030 | L BAND, Si, NPN, RF POWER TRANSISTOR |
| MRF160 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF154MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF1550FNT1 | 功能描述:射频MOSFET电源晶体管 LDMOS FET HI PWR TO272FN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF1550FT1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF1550N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1550NT1 | 功能描述:射频MOSFET电源晶体管 LDMOS FET HI PWR TO272FN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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