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参数资料
| 型号： | MRF154 |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | CASE 368-03, HOGPAC-2 |
| 文件页数： | 3/7页 |
| 文件大小： | 175K |
| 代理商： | MRF154 |
P
,OUTPUT
POWER
(W
A
TTS)
out
Figure 2. Power Gain versus Frequency
Figure 3. Output Power versus Input Power
Figure 4. DC Safe Operating Area
Figure 5. Capacitance versus Drain Voltage
Figure 6. Gate Voltage versus Drain Current
Figure 7. Common Source Unity Gain Frequency
versus Drain Current
POWER
GAIN
(dB)
25
20
15
10
5
0
200
2
5
10
20
50
100
f, FREQUENCY (MHz)
VDD = 50 V
IDQ = 800 mA
Pout = 600 W
800
050
Pin, INPUT POWER (WATTS)
100
MHz
30
MHz
100
010
20
600
400
200
0
800
600
400
200
0
VDD = 50 V
40 V
VDD = 50 V
40 V
(IDQ = 800 mA)
I D
,DRAIN
CURRENT
(AMPS)
100
200
220
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
10
1
TC = 25°C
C,
CAP
ACIT
ANCE
(pF)
10,000
12
VDS, DRAIN VOLTAGE (VOLTS)
5000
2000
1000
500
200
100
5
10
20
50
100
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
I DS
,DRAIN
CURRENT
(AMPS)
40
10
0
04
VGS, GATE–SOURCE VOLTAGE (VOLTS)
26
8
30
20
TYPICAL DEVICE SHOWN
VDS = 10 V
VGS(th) = 3.5 V
gfs = 24 mhos
f
,UNITY
GAIN
FREQUENCY
(MHz)
t
600
20
ID, DRAIN CURRENT (AMPS)
040
60
500
400
300
200
100
0
VDS = 30 V
15 V
3
REV 2
相关PDF资料 |
PDF描述 |
|---|---|
| MRF157 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF158R | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| MRF158R | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| MRF16030 | L BAND, Si, NPN, RF POWER TRANSISTOR |
| MRF160 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF154MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF1550FNT1 | 功能描述:射频MOSFET电源晶体管 LDMOS FET HI PWR TO272FN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF1550FT1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF1550N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1550NT1 | 功能描述:射频MOSFET电源晶体管 LDMOS FET HI PWR TO272FN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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