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参数资料
| 型号： | MRF154 |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | CASE 368-03, HOGPAC-2 |
| 文件页数： | 6/7页 |
| 文件大小： | 175K |
| 代理商： | MRF154 |
CIRCUIT CONSIDERATIONS
At high power levels (500 W and up), the circuit layout be-
comes critical due to the low impedance levels and high RF
currents associated with the output matching. Some of the
components, such as capacitors and inductors must also
withstand these currents. The component losses are directly
proportional to the operating frequency. The manufacturers
specifications on capacitor ratings should be consulted on
these aspects prior to design.
Push–pull circuits are less critical in general, since the
ground referenced RF loops are practically eliminated, and
the impedance levels are higher for a given power output.
High power broadband transformers are also easier to de-
sign than comparable LC matching networks.
EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY
Collector
Drain
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter
Source
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base
Gate
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V(BR)CES
V(BR)DSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCBO
VDGO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IC
ID
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ICES
IDSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IEBO
IGSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VBE(on)
VGS(th)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCE(sat)
VDS(on)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Cib
Ciss
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Cob
Coss
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
hfe
gfs
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RCE(sat) =
VCE(sat)
IC
rDS(on) =
VDS(on)
ID
6
REV 2
相关PDF资料 |
PDF描述 |
|---|---|
| MRF157 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF158R | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| MRF158R | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| MRF16030 | L BAND, Si, NPN, RF POWER TRANSISTOR |
| MRF160 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF154MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF1550FNT1 | 功能描述:射频MOSFET电源晶体管 LDMOS FET HI PWR TO272FN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF1550FT1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF1550N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1550NT1 | 功能描述:射频MOSFET电源晶体管 LDMOS FET HI PWR TO272FN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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