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参数资料
| 型号： | MRF160 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF Power FET(射频功率场效应管) |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | CASE 249-06, 4 PIN |
| 文件页数： | 2/12页 |
| 文件大小： | 379K |
| 代理商： | MRF160 |
MRF160
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
–
Source Breakdown Voltage
(VDS = 0 Vdc, VGS = 0 Vdc, ID = 1.0 mA)
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 V)
IDSS
—
—
0.5
mA
Gate
–
Source Leakage Current
(VGS = 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS
IGSS
—
—
1.0
μ
A
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 10 mA)
VGS(th)
1.5
3.0
4.5
Vdc
Drain Source On
–
Voltage
(VDS (on), VGS = 10 Vdc, ID = 500 mA)
VDS(on)
—
3.8
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 250 mA)
DYNAMIC CHARACTERISTICS
gfs
150
220
—
mS
Input Capacitance
(VDS = 28 Vdc, VGS = 0 V, f = 1.0 MHz)
Ciss
—
6.0
—
pF
Output Capacitance
(VDS = 28 V, VGS = 0 Vdc, f = 1.0 MHz)
Coss
—
6.5
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Crss
—
0.8
—
pF
Common Source Power Gain
(VDD = 28 Vdc, Pout = 4.0 W, f = 500 MHz, IDQ = 50 mA)
Gps
16
18
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 4.0 W, f = 500 MHz, IDQ = 50 mA)
η
50
55
—
%
Electrical Ruggedness
(VDD = 28 Vdc, Pout = 4.0 W, f = 500 MHz, IDQ = 50 mA)
Load VSWR = 30:1 at All Phase Angles at Frequency of Test
ψ
No Degradation in Output Power
Series Equivalent Input Impedance
(VDD = 28 Vdc, Pout = 4.0 W, f = 500 MHz, IDQ = 50 mA)
Zin
—
6.8
–
j21
—
Ohms
Series Equivalent Output Impedance
(VDD = 28 Vdc, Pout = 4.0 W, f = 500 MHz, IDQ = 50 mA)
Zout
—
21
–
j28
—
Ohms
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| MRF16006 | 制造商:M/A-COM Technology Solutions 功能描述:TRANS GP BJT NPN 60V 1A 3PIN CASE 395C-01 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
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