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参数资料
| 型号： | MRF166W |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | CASE 412-01, 4 PIN |
| 文件页数： | 1/10页 |
| 文件大小： | 206K |
| 代理商： | MRF166W |
The RF MOSFET Line
Power Field Effect Transistor
N–Channel Enhancement–Mode MOSFET
Designed primarily for wideband large–signal output and driver stages to
30 – 500 MHz.
Push–Pull Configuration Reduces Even Numbered Harmonics
Guaranteed Performance at 500 MHz, 28 Vdc
Output Power = 40 Watts
Gain = 14 dB
Efficiency = 50%
Typical Performance at 175 MHz, 28 Vdc
Output Power = 40 Watts
Gain = 17 dB
Efficiency = 60%
Excellent Thermal Stability, Ideally Suited for Class A Operation
Facilitates Manual Gain Control, ALC and Modulation Techniques
100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR
Low Crss — 4.0 pF @ VDS = 28 Volts
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Gate Voltage
VDSS
65
Vdc
Drain–Gate Voltage (RGS = 1.0 M)
VDGR
65
Vdc
Gate–Source Voltage
VGS
± 20
Adc
Drain Current — Continuous
ID
8.0
ADC
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
175
1.0
Watts
°C/W
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
R
θJC
1.0
°C/W
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF166W
40 W, 500 MHz
TMOS BROADBAND
RF POWER FET
CASE 412–01, Style 1
FLANGE
1
5
2
3
4
Order this document
by MRF166W/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF171 | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF171A | 功能描述:射频MOSFET电源晶体管 100-200MHz 45Watts 28Volt Gain 17dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF171AMP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF172 | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF173 | 功能描述:射频MOSFET电源晶体管 5-175MHz 80Watts 28Volt Gain 13dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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