参数资料
型号: MRF18090AR3
厂商: Freescale Semiconductor
文件页数: 2/9页
文件大小: 641K
描述: IC MOSFET RF N-CHAN NI-880
标准包装: 250
晶体管类型: LDMOS
频率: 1.81GHz
增益: 13.5dB
电压 - 测试: 26V
额定电流: 10µA
电流 - 测试: 750mA
功率 - 输出: 90W
电压 - 额定: 65V
封装/外壳: NI-880
供应商设备封装: NI-880
包装: 带卷 (TR)
AR
C
HIVE INF
O
RMATI
O
N
A
RCHIVE INFORMATION
2
RF Device Data
Freescale Semiconductor
MRF18090AR3
Table 4. Electrical Characteristics
(TC
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain--Source Breakdown Voltage
(VGS
=0Vdc,ID
= 100
μAdc)
V(BR)DSS
65
?
?
Vdc
Zero Gate Voltage Drain Current
(VDS
=26Vdc,VGS
=0Vdc)
IDSS
?
?
10
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Quiescent Voltage
(VDS
=26Vdc,ID
= 750 mAdc)
VGS(Q)
2.5
3.7
4.5
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=1Adc)
VDS(on)
?
0.1
?
Vdc
Forward Transconductance
(VDS
=10Vdc,ID
=3Adc)
gfs
?
7.2
?
S
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS
=26Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
?
4.2
?
pF
Functional Tests
(In Freescale Test Fixture)
Common--Source Amplifier Power Gain @ 90 W
(VDD
=26Vdc,IDQ
= 750 mA, f = 1805 MHz)
Gps
12.0
13.5
?
dB
Drain Efficiency @ 90 W
(VDD
=26Vdc,IDQ
= 750 mA, f = 1805 MHz)
η
47
52
?
%
Input Return Loss
(VDD
=26Vdc,Pout
=90WCW,IDQ
= 750 mA, f = 1805 MHz)
IRL
?
?
-- 1 0
dB
相关PDF资料
PDF描述
MRF19030LSR5 IC MOSFET RF N-CHAN NI-400S
MRF19045LR3 IC MOSFET RF N-CHAN NI-400
MRF19085LR3 IC MOSFET RF N-CHAN NI-780
MRF19090SR3 IC MOSFET RF N-CHAN NI-880S
MRF19125R5 IC MOSFET RF N-CHAN NI-880
相关代理商/技术参数
参数描述
MRF18090AS 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS
MRF18090B 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF18090BR3 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF18090BS 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF18090BSR3 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs