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| 型号： | MRF19090SR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 329K |
| 描述： | IC MOSFET RF N-CHAN NI-880S |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS |
| 频率： | 1.93GHz |
| 增益： | 11.5dB |
| 电压 - 测试： | 26V |
| 额定电流： | 10µA |
| 电流 - 测试： | 750mA |
| 功率 - 输出： | 90W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-880S |
| 供应商设备封装： | NI-880S |
| 包装： | 带卷 (TR) |
MRF19090SR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for Class AB PCN and PCS base station applications with
frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and
multicarrier amplifier applications.
?
Typical CDMA Performance: 1930 MHz, 26 Volts
IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power ? 9 Watts Avg.
Power Gain ? 10 dB
Adjacent Channel Power ?
885 kHz: -47 dBc @ 30 kHz BW
1.25 MHz: -55 dBc @ 12.5 kHz BW
2.25 MHz: -55 dBc @ 1 MHz BW
?
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 90 Watts CW
Output Power
Features
?
Internally Matched for Ease of Use
?
High Gain, High Efficiency and High Linearity
?
Integrated ESD Protection
?
Designed for Maximum Gain and Insertion Phase Flatness
?
Excellent Thermal Stability
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC
= 25
°C
Derate above 25°C
PD
270
1.54
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.65
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
LIFETIME BUY
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
Document Number: MRF19090
Rev. 8, 10/2008
Freescale Semiconductor
Technical Data
MRF19090SR3
1930-1990 MHz, 90 W, 26 V
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 465C-02, STYLE 1
NI-880S
?
Freescale Semiconductor, Inc., 2008. All rights reserved.
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| MRF19125R3 | 功能描述:IC MOSFET RF N-CHAN NI-880 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF19125R5 | 功能描述:IC MOSFET RF N-CHAN NI-880 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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