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| 型号： | MRF21030LR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 710K |
| 描述： | IC MOSFET RF N-CHAN NI-400 |
| 产品变化通告： | RF Devices Discontinuation 28/Jun/2011 |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS |
| 频率： | 2.14GHz |
| 增益： | 13dB |
| 电压 - 测试： | 28V |
| 额定电流： | 1µA |
| 电流 - 测试： | 250mA |
| 功率 - 输出： | 30W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-400 |
| 供应商设备封装： | NI-400 |
| 包装： | 带卷 (TR) |
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MRF21030LR3 MRF21030LSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio and WLL
applications.
?
Wideband CDMA Performance: --45 dB ACPR @ 4.096 MHz, 28 Volts
Output Power ? 3.5 Watts
Power Gain ? 14 dB
Efficiency ? 15%
?
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 30 Watts CW
Output Power
Features
?
High Gain, High Efficiency and High Linearity
?
Integrated ESD Protection
?
Designed for Maximum Gain and Insertion Phase Flatness
?
Excellent Thermal Stability
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
Low Gold Plating Thickness on Leads, 40μ″
Nominal.
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Total Device Dissipation @ TC
=25°C
Derate above 25°C
PD
83.3
0.48
W
W/°C
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
2.1
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Document Number: MRF21030
Rev. 12, 5/2006
Freescale Semiconductor
Technical Data
MRF21030LR3
MRF21030LSR3
2200 MHz, 30 W, 28 V
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465E--04, STYLE 1
NI--400
MRF21030LR3
CASE 465F--04, STYLE 1
NI--400S
MRF21030LSR3
?
Freescale Semiconductor, Inc., 2006, 2008.
All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF21030LR5 | 功能描述:IC MOSFET RF N-CHAN NI-400 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF21030LSR3 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF21030R3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS |
| MRF21030S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391B |
| MRF21030SR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS |
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