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| 型号： | MRF282SR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/13页 |
| 文件大小： | 505K |
| 描述： | IC MOSFET RF N-CHAN NI-200S |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 2GHz |
| 增益： | 11.5dB |
| 电压 - 测试： | 26V |
| 额定电流： | 1µA |
| 电流 - 测试： | 75mA |
| 功率 - 输出： | 10W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-200S |
| 供应商设备封装： | NI-200S |
| 包装： | 带卷 (TR) |
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MRF282SR1 MRF282ZR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for Class A and Class AB PCN and PCS base station applications
with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and
multicarrier amplifier applications.
?
Specified Two--Tone Performance @ 2000 MHz, 26 Volts
Output Power ? 10 Watts PEP
Power Gain ? 10.5 dB
Efficiency ? 28%
Intermodulation Distortion ? --31 dBc
?
Specified Single--Tone Performance @ 2000 MHz, 26 Volts
Output Power ? 10 Watts CW
Power Gain ? 9.5 dB
Efficiency ? 35%
?
Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 10 Watts CW Output Power
Features
?
Excellent Thermal Stability
?
Characterized with Series Equivalent Large--Signal
Impedance Parameters
?
RoHS Compliant
?
Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
±20
Vdc
Total Device Dissipation @ TC
=25°C
Derate above 25°C
PD
60
0.34
W
W/°C
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
4.2
°C/W
Table 3. Electrical Characteristics
(TC
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain--Source Breakdown Voltage
(VGS
=0,ID
=10μAdc)
V(BR)DSS
65
?
?
Vdc
Zero Gate Voltage Drain Current
(VDS
=28Vdc,VGS
=0)
IDSS
?
?
1.0
μAdc
Gate--Source Leakage Current
(VGS
=20Vdc,VDS
=0)
IGSS
?
?
1.0
μAdc
NOTE --
CAUTION
-- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices
should be observed.
Document Number: MRF282
Rev. 15, 5/2006
Freescale Semiconductor
Technical Data
MRF282SR1
MRF282ZR1
2000 MHz, 10 W, 26 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 458B--03, STYLE 1
NI--200S
MRF282SR1
CASE 458C--03, STYLE 1
NI--200Z
MRF282ZR1
?
Freescale Semiconductor, Inc., 2006, 2008.
All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF282Z | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF282ZR1 | 功能描述:射频MOSFET电源晶体管 RF PWR FET SOE PKG RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF284 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF284C | 制造商:Motorola Inc 功能描述:284C |
| MRF284LR1 | 制造商:Freescale Semiconductor 功能描述: |
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