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| 型号： | MRF377HR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/14页 |
| 文件大小： | 1271K |
| 描述： | MOSFET RF N-CHAN 32V 45W NI-860C |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS |
| 频率： | 860MHz |
| 增益： | 18.2dB |
| 电压 - 测试： | 32V |
| 额定电流： | 17A |
| 电流 - 测试： | 2A |
| 功率 - 输出： | 45W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-860C3 |
| 供应商设备封装： | NI-860C3 |
| 包装： | 带卷 (TR) |
MRF377HR3
1
RF Device Data
Freescale Semiconductor
RF Power Field--Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies from 470 to 860 MHz. The high gain and broadband performance
of these devices make them ideal for large--signal, common source amplifier
applications in 32 volt digital television transmitter equipment.
?
Typical Broadband DVBT OFDM Performance @ 470--860 MHz, 32 Volts,
IDQ
= 2000 mA, 8K Mode, 64 QAM
Output Power ? 45 Watts Avg.
Power Gain
≥
16.7 dB
Drain Efficiency
≥
21%
ACPR
≤
--58 dBc
?
Typical Broadband ATSC 8VSB Performance @ 470--860 MHz, 32 Volts,
IDQ
= 2000 mA
Output Power ? 80 Watts Avg.
Power Gain
≥
16.5 dB
Drain Efficiency
≥
27.5%
IMD
≥
--31.3 dBc
?
Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts CW
Output Power
Features
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Device Designed for Push--Pull Operation Only
?
Integrated ESD Protection
?
Excellent Thermal Stability
?
Lower Thermal Resistance Package
?
Low Gold Plating Thickness on Leads, 40μ″
Nominal.
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
-- 0.5, +65
Vdc
Gate--Source Voltage
VGS
-- 0.5, +15
Vdc
Drain Current -- Continuous
ID
17
Adc
Total Device Dissipation @ TC
=25°C
Derate above 25°C
PD
648
3.7
W
W/°C
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
CW Operation @ TC
=25°C
Derate above 25°C
CW
235
1.38
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 105 W CW
Case Temperature 77°C, 45 W CW
RθJC
0.27
0.29
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Document Number: MRF377H
Rev. 2, 3/2009
Freescale Semiconductor
Technical Data
470 -- 860 MHz, 45 W AVG., 32 V
LATERAL N--CHANNEL
RF POWER MOSFET
CASE 375G--04, STYLE 1
NI--860C3
MRF377HR3
?
Freescale Semiconductor, Inc., 2006, 2009.
All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF377HR3_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF377HR5 | 功能描述:射频MOSFET电源晶体管 250W 860MHZ 32V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF377R3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF377R5 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF3866 | 功能描述:射频双极小信号晶体管 RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
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