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参数资料
| 型号： | MRF377HR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 7/14页 |
| 文件大小： | 1271K |
| 描述： | MOSFET RF N-CHAN 32V 45W NI-860C |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS |
| 频率： | 860MHz |
| 增益： | 18.2dB |
| 电压 - 测试： | 32V |
| 额定电流： | 17A |
| 电流 - 测试： | 2A |
| 功率 - 输出： | 45W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-860C3 |
| 供应商设备封装： | NI-860C3 |
| 包装： | 带卷 (TR) |
2
RF Device Data
Freescale Semiconductor
MRF377HR3
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
7 (Minimum)
Table 4. Electrical Characteristics
(TC
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(1)
Drain--Source Breakdown Voltage
(4)
(VGS
=0Vdc,ID
=10
μA)
V(BR)DSS
65
?
?
Vdc
Zero Gate Voltage Drain Current
(4)
(VDS
=32Vdc,VGS
=0Vdc)
IDSS
?
?
1
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 200
μA)
VGS(th)
?
2.8
?
Vdc
On Characteristics
Gate Quiescent Voltage
(3)
(VDS
=32Vdc,ID
= 2000 mAdc)
VGS(Q)
2.5
3.5
4.5
Vdc
Drain--Source On--Voltage
(1)
(VGS
=10Vdc,ID
=3A)
VDS(on)
?
0.27
?
Vdc
Dynamic Characteristics
(1,2)
Reverse Transfer Capacitance
(VDS
=28Vdc,VGS
=0,f=1MHz)
Crss
?
3.2
?
pF
Functional Tests
(3)
(In DVBT OFDM Single--Channel, Narrowband Fixture, 50 ohm system)
Common Source Power Gain
(VDD
=32Vdc,Pout
=45WAvg.,IDQ
= 2000 mA,
f = 860 MHz)
Gps
16.5
18.2
?
dB
Drain Efficiency
(VDD
=32Vdc,Pout
=45WAvg.,IDQ
= 2000 mA,
f = 860 MHz)
ηD
21
22.9
?
%
Adjacent Channel Power Ratio
(VDD
=32Vdc,Pout
=45WAvg.,IDQ
= 2000 mA,
f = 860 MHz)
ACPR
?
--59.2
-- 5 7
dBc
Typical Performances
(3)
(In DVBT OFDM Single--Channel, Broadband Fixture, 50 ohm system)
Common Source Power Gain
(VDD
=32Vdc,Pout
=45WAvg.,IDQ
= 2000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
Gps
?
?
?
?
?
17.6
17.6
17.4
17.4
16.8
?
?
?
?
?
dB
1. Each side of device measured separately.
2. Part is internally matched both on input and output.
3. Measurement made with device in push--pull configuration.
4. Drains are tied together internally as this is a total device value.
(continued)
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF377HR3_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF377HR5 | 功能描述:射频MOSFET电源晶体管 250W 860MHZ 32V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF377R3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF377R5 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF3866 | 功能描述:射频双极小信号晶体管 RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
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