参数资料
型号: MRF377HR3
厂商: Freescale Semiconductor
文件页数: 14/14页
文件大小: 1271K
描述: MOSFET RF N-CHAN 32V 45W NI-860C
产品变化通告: RF Devices Discontinuation 01/Jul/2010
标准包装: 250
晶体管类型: LDMOS
频率: 860MHz
增益: 18.2dB
电压 - 测试: 32V
额定电流: 17A
电流 - 测试: 2A
功率 - 输出: 45W
电压 - 额定: 65V
封装/外壳: NI-860C3
供应商设备封装: NI-860C3
包装: 带卷 (TR)
MRF377HR3
9
RF Device Data
Freescale Semiconductor
TYPICAL DVBT OFDM BROADBAND CHARACTERISTICS
900
9
19
420
-- 6 5
40
18 35
17 30Gps
16 25
15 20ηD
14 --40VDD
=32Vdc,Pout
=45W(Avg.),IDQ
= 2000 mA
13 --458K Mode DVBT OFDM64 QAM Data Carrier Modulation
12
-- 5 0
11
-- 5 5
10
ACPR
-- 6 0
480 540 600 660 720 780 840
f, FREQUENCY (MHz)
Figure 9. Single--Channel DVBT OFDM
Broadband Performance
G
ps
, POWER GAIN (dB)
ACPR, ADJACENT CHANNEL POWER RATIO
5 Symbols
50
16
19
2
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single--Channel DVBT OFDM Broadband
Performance Power Gain versus Output Power
G
ps
, POWER GAIN (dBc)
30
46810
18.5
18
17.5
17
16.5
470 MHz
VDD
=32Vdc,IDQ
= 2000 mA
8K Mode OFDM
64 QAM Data Carrier Modulation
5 Symbols
660 MHz
560 MHz
860 MHz
760 MHz
100
0
30
470 MHz
Pout, OUTPUT POWER (WATTS) AVG.
Figure 11. Single--Channel DVBT OFDM
Broadband Performance Drain Efficiency versus
Output Power
VDD
=32Vdc
IDQ
= 2000 mA
8K Mode OFDM
64 QAM Data Carrier Modulation
5 Symbols
10
25
20
15
10
5
660 MHz
560 MHz
860 MHz
760 MHz
100
-- 6 8
-- 5 6
10
470 MHz
Pout, OUTPUT POWER (WATTS) AVG.
Figure 12. Single--Channel DVBT OFDM Broadband Performance
Adjacent Channel Power Ratio versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
VDD
=32Vdc
IDQ
= 2000 mA
8K Mode DVBT OFDM
64 QAM
Data Carrier Modulation
5 Symbols
-- 5 8
-- 6 0
-- 6 2
-- 6 4
-- 6 6
660 MHz
860 MHz
560 MHz
760 MHz
5
-- 2 0
-- 5
7.61 MHz
f, FREQUENCY (MHz)
Figure 13. 8K Mode DVBT OFDM Spectrum
-- 3 0
-- 4 0
-- 5 0
-- 9 0
-- 7 0
-- 8 0
--100
-- 11 0
-- 6 0
-- 4 -- 3 -- 2 -- 1 0 1 2 3 4
4kHzBW
4kHzBW
(dB)
η
D
,
DRAIN EFFICIENCY (%)
η
D
,
DRAIN EFFICIENCY (%)
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
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