- 您现在的位置：买卖IC网 > Datasheet目录92 > MRF373ALSR5 (Freescale Semiconductor)MOSFET RF N-CHAN 32V 75W NI-360S Datasheet资料下载
参数资料
| 型号： | MRF373ALSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 367K |
| 描述： | MOSFET RF N-CHAN 32V 75W NI-360S |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 860MHz |
| 增益： | 18.2dB |
| 电压 - 测试： | 32V |
| 额定电流： | 1µA |
| 电流 - 测试： | 200mA |
| 功率 - 输出： | 75W |
| 电压 - 额定： | 70V |
| 封装/外壳： | NI-360S |
| 供应商设备封装： | NI-360 短引线 |
| 包装： | 带卷 (TR) |
N
O
T RE
CO
MMENDED F
O
R NEW DE
S
I
G
N
NOT RECOMMENDED FOR NEW DESIGN
MRF373ALR1 MRF373ALSR1
1
Freescale Semiconductor
RF Product Device Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common source amplifier applica-
tions in 28/32 volt transmitter equipment.
?
Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture
Output Power ? 75 Watts
Power Gain ? 18.2 dB
Efficiency ? 60%
?
Capable of Handling 10:1 VSWR @ 32 Vdc, 860 MHz,
75 Watts CW Output Power
Features
?
Integrated ESD Protection
?
Excellent Thermal Stability
?
Characterized with Series Equivalent Large-Signal
Impedance Parameters
?
Low Gold Plating Thickness on Leads.
L Suffix Indicates 40μ″ Nominal.
?
RoHS Compliant
?
In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +70
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC
= 25
°C MRF373ALR1
Derate above 25°C
MRF373ALSR1
PD
197
1.12
278
1.59
W
W/°C
W
W/°C
Storage Temperature Range
Tstg
-65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case MRF373ALR1
MRF373ALSR1
RθJC
0.89
0.63
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model MRF373ALR1
MRF373ALSR1
M2 (Minimum)
M1 (Minimum)
Document Number: MRF373A
Rev. 7, 9/2008
Freescale Semiconductor
Technical Data
470-860 MHz, 75 W, 32 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B-05, STYLE 1
NI-360
MRF373ALR1
CASE 360C-05, STYLE 1
NI-360S
MRF373ALSR1
MRF373ALR1
MRF373ALSR1
G
D
S
?
Freescale Semiconductor, Inc., 2008. All rights reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| MRF374A | IC MOSFET RF N-CHAN NI-650 |
| MRF377HR3 | MOSFET RF N-CHAN 32V 45W NI-860C |
| MRF5P20180HR6 | MOSFET RF N-CHAN 28V 38W NI-1230 |
| MRF5P21045NR1 | MOSFET RF N-CH TO-270-4 |
| MRF5P21180HR6 | MOSFET RF N-CHAN 28V 38W NI-1230 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF373AR1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF373ASR1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF373R1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF373S | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF373SR1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
发布紧急采购，3分钟左右您将得到回复。