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| 型号： | MRF374A |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/12页 |
| 文件大小： | 571K |
| 描述： | IC MOSFET RF N-CHAN NI-650 |
| 标准包装： | 14 |
| 晶体管类型： | LDMOS |
| 频率： | 857MHz |
| 增益： | 17.3dB |
| 电压 - 测试： | 32V |
| 额定电流： | 1µA |
| 电流 - 测试： | 400mA |
| 功率 - 输出： | 130W |
| 电压 - 额定： | 70V |
| 封装/外壳： | NI-650 |
| 供应商设备封装： | NI-650 |
| 包装： | 管件 |
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MRF374A
1
RF Device Data
Freescale Semiconductor
RF Power Field--Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies from 470 to 860 MHz. The high gain and broadband performance of
this device make it ideal for large--signal, common source amplifier applications
in 28/32 volt transmitter equipment.
?
Typical Two--Tone Performance @ 860 MHz, 32 Volts, Narrowband Fixture
Output Power ? 130 Watts PEP
Power Gain ? 17.3 dB
Efficiency ? 41%
IMD ? --32.5 dBc
?
Capable of Handling 10:1 VSWR @ 32 Vdc, 857 MHz, 130 Watts CW
Output Power
Features
?
Integrated ESD Protection
?
Excellent Thermal Stability
?
Characterized with Differential Large--Signal Impedance Parameters
?
RoHS Compliant
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +70
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Total Device Dissipation @ TC
=25°C
Derate above 25°C
PD
302
1.72
W
W/°C
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.58
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
Document Number: MRF374A
Rev. 5, 5/2006
Freescale Semiconductor
Technical Data
470--860 MHz, 130 W, 32 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375F--04, STYLE 1
NI--650
MRF374A
?
Freescale Semiconductor, Inc., 2006, 2010.
All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF374A_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF377 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF377HR3 | 功能描述:射频MOSFET电源晶体管 250W 860MHZ 32V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF377HR3_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF377HR5 | 功能描述:射频MOSFET电源晶体管 250W 860MHZ 32V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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