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| 型号： | MRF373ALSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 3/10页 |
| 文件大小： | 367K |
| 描述： | MOSFET RF N-CHAN 32V 75W NI-360S |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 860MHz |
| 增益： | 18.2dB |
| 电压 - 测试： | 32V |
| 额定电流： | 1µA |
| 电流 - 测试： | 200mA |
| 功率 - 输出： | 75W |
| 电压 - 额定： | 70V |
| 封装/外壳： | NI-360S |
| 供应商设备封装： | NI-360 短引线 |
| 包装： | 带卷 (TR) |
N
O
T RE
CO
MMENDED F
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R NEW DE
S
I
G
N
NOT RECOMMENDED FOR NEW DESIGN
2
Freescale Semiconductor
RF Product Device Data
MRF373ALR1 MRF373ALSR1
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(VGS
= 0 Vdc, I
D
=1
μA)
V(BR)DSS
70
?
?
Vdc
Zero Gate Voltage Drain Current
(VDS
= 32 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 10 V, I
D
= 200
μA)
VGS(th)
2
2.9
4
Vdc
Gate Quiescent Voltage
(VDS
= 32 V, I
D
= 100 mA)
VGS(Q)
2.5
3.3
4.5
Vdc
Drain-Source On-Voltage
(VGS
= 10 V, I
D
= 3 A)
VDS(on)
?
0.41
0.45
Vdc
Dynamic Characteristics
Input Capacitance
(VDS
= 32 V, V
GS
= 0, f = 1 MHz)
Ciss
?
98.5
?
pF
Output Capacitance
(VDS
= 32 V, V
GS
= 0, f = 1 MHz)
Coss
?
49
?
pF
Reverse Transfer Capacitance
(VDS
= 32 V, V
GS
= 0, f = 1 MHz)
Crss
?
2
?
pF
Functional Characteristics
(50 ohm system)
Common Source Power Gain
(VDD
= 32 V, P
out
= 75 W CW, I
DQ
= 200 mA, f = 860 MHz)
Gps
16.5
18.2
?
dB
Drain Efficiency
(VDD
= 32 V, P
out
= 75 W CW, I
DQ
= 200 mA, f = 860 MHz)
η
56
60
?
%
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相关代理商/技术参数 |
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|---|---|
| MRF373AR1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF373ASR1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF373R1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF373S | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF373SR1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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