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| 型号： | MRF372R3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/16页 |
| 文件大小： | 871K |
| 描述： | IC MOSFET RF N-CHAN NI-860C3 |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS |
| 频率： | 857MHz |
| 增益： | 17dB |
| 电压 - 测试： | 32V |
| 额定电流： | 17A |
| 电流 - 测试： | 800mA |
| 功率 - 输出： | 180W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-860C3 |
| 供应商设备封装： | NI-860C3 |
| 包装： | 带卷 (TR) |
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MRF372R3 MRF372R5
1
RF Device Data
Freescale Semiconductor
RF Power Field--Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies from 470 to 860 MHz. The high gain and broadband performance of
this device make it ideal for large--signal, common source amplifier applications
in 32 volt transmitter equipment.
?
Typical Narrowband Two--Tone Performance @ f1 = 857 MHz,
f2 = 863 MHz, 32 Volts
Output Power — 180 Watts PEP
Power Gain — 17 dB
Efficiency — 36%
IMD — --35 dBc
?
Typical Broadband Two--Tone Performance @ f1 = 857 MHz,
f2 = 863 MHz, 32 Volts
Output Power — 180 Watts PEP
Power Gain — 14.5 dB
Efficiency — 37%
IMD — --31 dBc
?
Capable of Handling 3:1 VSWR @ 32 Vdc, 857 MHz, 90 Watts CW Output
Power
Features
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Internally Matched for Ease of Use
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Integrated ESD Protection
?
Excellent Thermal Stability
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Characterized with Series Equivalent Large--Signal Impedance Parameters
?
RoHS Compliant
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In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +68
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Drain Current -- Continuous
ID
17
Adc
Total Device Dissipation @ TC
=25°C
Derate above 25°C
PD
350
2.0
W
W/°C
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.5
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Document Number: MRF372
Rev. 9, 5/2006
Freescale Semiconductor
Technical Data
470--860 MHz, 180 W, 32 V
LATERAL N--CHANNEL
RF POWER MOSFET
CASE 375G--04, STYLE 1
NI--860C3
MRF372R3
MRF372R5
?
Freescale Semiconductor, Inc., 2006, 2010.
All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF372R5 | 功能描述:射频MOSFET电源晶体管 180W 860MHZ NI-860MOD RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF373 | 制造商:Freescale Semiconductor 功能描述: |
| MRF373A | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF373AL | 制造商:Freescale Semiconductor 功能描述:TRANS MOSFET N-CH 70V 3-PIN NI-360 - Bulk |
| MRF373ALR1 | 功能描述:射频MOSFET电源晶体管 75W 860MHZ LDMOS NI360L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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