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| 型号： | MRF21030LR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 4/9页 |
| 文件大小： | 710K |
| 描述： | IC MOSFET RF N-CHAN NI-400 |
| 产品变化通告： | RF Devices Discontinuation 28/Jun/2011 |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS |
| 频率： | 2.14GHz |
| 增益： | 13dB |
| 电压 - 测试： | 28V |
| 额定电流： | 1µA |
| 电流 - 测试： | 250mA |
| 功率 - 输出： | 30W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-400 |
| 供应商设备封装： | NI-400 |
| 包装： | 带卷 (TR) |
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RF Device Data
Freescale Semiconductor
MRF21030LR3 MRF21030LSR3
TYPICAL CHARACTERISTICS
VDD
=28Vdc,Pout
= 30 W (PEP), IDQ
= 250 mA
Two--Tone Measurement, 100 kHz Tone Spacing
η
IRL
IMD
Gps
, DRAIN EFFICIENCY (%),
η
G
ps
, POWER GAIN (dB)
ADJACENT CHANNEL POWER RATIO (dB)
Figure 3. Class AB Broadband Circuit Performance
f, FREQUENCY (MHz)
0
2080
2100 2180 22120
2140 2160
2200
01 3
Figure 4. CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
5
Pout, OUTPUT POWER (WATTS Avg.) CDMA
30
20
-- 3 5
Figure 5. Intermodulation Distortion
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
-- 5 5
1.0
Figure 6. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
100
1.0
15
16
60
-- 4 5
-- 3 5
-- 1 5
-- 3 0
10
20
10
14
456
100
10
131.0
100
30
40
-- 5
-- 2 5
-- 2 0
10
3rd Order
5th Order
-- 2 5
-- 5 0
-- 4 0
-- 3 0
-- 2 0
-- 5 0
-- 7 0
-- 6 0
-- 4 0
-- 3 0
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATIO
N DISTORTION (dBc)
, DRAIN EFFICIENCY (%),
η
G
ps
, POWER GAIN (dB)
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
VDD, DRAIN VOLTAGE (VOLTS)
-- 3 834
22 3224
-- 3 0
-- 2 2
IMD, INTERMODULATIO
N DISTORTION (dBc)
26 3028
1320
-- 3 4
-- 2 6
15
25
-- 7 0
-- 3 0
-- 5 0
-- 2 0
-- 4 0
-- 6 0
VDD
=28Vdc,IDQ
= 250 mA, f = 2140 MHz
Channel Spacing (Channel Bandwidth):
4.096 MHz (5 MHz)
IMD, INTERMODULATIO
N DISTORTION (dBc)
10
200 mA
250 mA
400 mA
VDD
= 28 Vdc, f = 2140 MHz
Two--Tone Measurement,
100 kHz Tone Spacing
IMD, INTERMODULATIO
N DISTORTION (dBc)
VDD
=28Vdc,IDQ
= 250 mA, f = 2140 MHz
Two--Tone Measurement,
100 kHz Tone Spacing
G
ps
, POWER GAIN (dB)
VDD
= 28 Vdc, f = 2140 MHz
Two--Tone Measurement, 100 kHz Tone Spacing
G
ps
, POWER GAIN (dB)
13.5
15
14.5
14
Pout
= 30 W (PEP)
IDQ
= 250 mA, f = 2140 MHz
Two--Tone Measurement, 100 kHz Tone Spacing
η
Gps
Gps
IMD
350 mA
300 mA
200 mA
250 mA
400 mA
350 mA
300 mA
7th Order
50 --10
ACPR
-- 3 2
-- 2 4
-- 3 6
-- 2 8
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF21030LR5 | 功能描述:IC MOSFET RF N-CHAN NI-400 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF21030LSR3 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF21030R3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS |
| MRF21030S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391B |
| MRF21030SR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS |
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