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| 型号： | MRF21085LSR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/13页 |
| 文件大小： | 606K |
| 描述： | IC MOSFET RF N-CHAN NI-780S |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS |
| 频率： | 2.11GHz |
| 增益： | 13.6dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1A |
| 功率 - 输出： | 19W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780S |
| 供应商设备封装： | NI-780S |
| 包装： | 带卷 (TR) |
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MRF21085LR3 MRF21085LSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio and WLL
applications.
?
Typical 2--Carrier W--CDMA Performance: VDD
=28Volts,IDQ
= 1000 mA,
Pout
= 19 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84
MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain ? 13.6 dB
Drain Efficiency ? 23%
IM3 @ 10 MHz Offset ? --37.5 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset ? --41 dBc in 3.84 MHz Channel Bandwidth
?
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW
Output Power
Features
?
Internally Matched for Ease of Use
?
High Gain, High Efficiency and High Linearity
?
Integrated ESD Protection
?
Designed for Maximum Gain and Insertion Phase Flatness
?
Excellent Thermal Stability
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40μ″
Nominal.
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Total Device Dissipation @ TC
=25°C
Derate above 25°C
PD
224
1.28
W
W/°C
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.78
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Document Number: MRF21085
Rev. 9, 5/2006
Freescale Semiconductor
Technical Data
MRF21085LR3
MRF21085LSR3
2110--2170 MHz, 90 W, 28 V
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465--06, STYLE 1
NI--780
MRF21085LR3
CASE 465A--06, STYLE 1
NI--780S
MRF21085LSR3
?
Freescale Semiconductor, Inc., 2006, 2010.
All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF21085LSR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF21085LSR5 | 功能描述:IC MOSFET RF N-CHAN NI-780S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF21085R3 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF21085SR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21090 | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, RFMOD |
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