- 您现在的位置：买卖IC网 > Datasheet目录92 > MRF281ZR1 (Freescale Semiconductor)IC MOSFET RF N-CHAN NI-200Z Datasheet资料下载
参数资料
| 型号： | MRF281ZR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 390K |
| 描述： | IC MOSFET RF N-CHAN NI-200Z |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 1.93GHz |
| 增益： | 12.5dB |
| 电压 - 测试： | 26V |
| 额定电流： | 10µA |
| 电流 - 测试： | 25mA |
| 功率 - 输出： | 4W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-200Z |
| 供应商设备封装： | NI-200Z |
| 包装： | 带卷 (TR) |
AR
C
HIVE INF
O
RMATI
O
N
A
RCHIVE INFORMATION
MRF281SR1 MRF281ZR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for digital and analog cellular PCN and PCS base station
applications with frequencies from 1000 to 2500 MHz. Characterized for
operation Class A and Class AB at 26 volts in commercial and industrial
applications.
?
Specified Two--Tone Performance @ 1930 MHz, 26 Volts
Output Power ? 4 Watts PEP
Power Gain ? 11 dB
Efficiency ? 30%
Intermodulation Distortion ? --29 dBc
?
Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 4 Watts CW Output Power
Features
?
Excellent Thermal Stability
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
S--Parameter Characterization at High Bias Levels
?
RoHS Compliant
?
In Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
±20
Vdc
Total Device Dissipation @ TC
=25°C
Derate above 25°C
PD
20
0.115
W
W/°C
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
5.74
°C/W
Table 3. Electrical Characteristics
(TC
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain--Source Breakdown Voltage
(VGS
=0,ID
=10μAdc)
V(BR)DSS
65
74
?
Vdc
Zero Gate Voltage Drain Current
(VDS
=28Vdc,VGS
=0)
IDSS
?
?
10
μAdc
Gate--Source Leakage Current
(VGS
=20Vdc,VDS
=0)
IGSS
?
?
1
μAdc
NOTE --
CAUTION
-- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices
should be observed.
Document Number: MRF281
Rev. 6, 10/2008
Freescale Semiconductor
Technical Data
MRF281SR1
MRF281ZR1
1930--1990 MHz, 4 W, 26 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 458B--03, STYLE 1
NI--200S
MRF281SR1
CASE 458C--03, STYLE 1
NI--200Z
MRF281ZR1
?
Freescale Semiconductor, Inc., 2008, 2010.
All rights reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| MRF282SR1 | IC MOSFET RF N-CHAN NI-200S |
| MRF372R3 | IC MOSFET RF N-CHAN NI-860C3 |
| MRF373ALSR5 | MOSFET RF N-CHAN 32V 75W NI-360S |
| MRF374A | IC MOSFET RF N-CHAN NI-650 |
| MRF377HR3 | MOSFET RF N-CHAN 32V 45W NI-860C |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF282 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF282S | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF282SR1 | 功能描述:IC MOSFET RF N-CHAN NI-200S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF282Z | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF282ZR1 | 功能描述:射频MOSFET电源晶体管 RF PWR FET SOE PKG RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。