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参数资料
| 型号： | MRF282 |
| 厂商： | Motorola, Inc. |
| 英文描述： | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| 中文描述： | 横向N沟道宽带RF功率MOSFET |
| 文件页数： | 2/11页 |
| 文件大小： | 142K |
| 代理商： | MRF282 |
MRF282S MRF282Z
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS continued
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 50
μ
Adc)
VGS(th)
2.0
3.0
4.0
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 0.5 Adc)
VDS(on)
—
0.4
0.6
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 0.5 Adc)
gfs
0.5
0.7
—
S
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 75 mAdc)
VGS(q)
3.0
4.0
5.0
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
—
15
—
pF
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Coss
—
8.0
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Crss
—
0.45
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Common–Source Power Gain
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Gps
11
12.6
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
η
30
34
—
%
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IMD
—
–32.5
–30
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IRL
10
14
—
dB
Common–Source Power Gain
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Gps
11
12.6
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
η
—
30
—
%
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IMD
—
–32.5
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IRL
10
14
—
dB
Common–Source Power Gain
(VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz)
Gps
11
12.3
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz)
η
40
45
—
%
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz, Load VSWR = 10:1,
All Phase Angles at Frequency of Test)
Ψ
No Degradation In Output Power
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF282S | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF282SR1 | 功能描述:IC MOSFET RF N-CHAN NI-200S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF282Z | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF282ZR1 | 功能描述:射频MOSFET电源晶体管 RF PWR FET SOE PKG RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF284 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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