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参数资料
| 型号： | MRF282 |
| 厂商： | Motorola, Inc. |
| 英文描述： | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| 中文描述： | 横向N沟道宽带RF功率MOSFET |
| 文件页数： | 4/11页 |
| 文件大小： | 142K |
| 代理商： | MRF282 |
MRF282S MRF282Z
4
MOTOROLA RF DEVICE DATA
RF
INPUT
Z10
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z9
VGG
(BIAS)
VDD
C1
C6
C2
C3
L4
L1
C9
R1
B1
C4
R2
B2
C7
R3
B3
C17
C15
Z8
C12
DUT
+
C5
C8
L2
L3
L5
Z11
C16
R6
B6
C13
R5
B4
C10
R4
B5
+
C11
C14
+
–
+
–
Figure 2. Schematic of 1.81 – 1.88 GHz Broadband Test Circuit
B1, B2, B3,
B4, B5, B6
C1, C16
C2, C9, C12
C3
C4, C13
C5, C14
C6, C8, C11, C15
C7, C10
C17
L1
Ferrite Bead, Fair Rite, (2743021446)
470
μ
F, 63 V, Electrolytic Capacitor, Mallory
0.6–4.5 pF, Variable Capacitor, Johanson Gigatrim
0.8–4.5 pF, Variable Capacitor, Johanson Gigatrim
0.1
μ
F, Chip Capacitor
100 pF, B Case Chip Capacitor, ATC
12 pF, B Case Chip Capacitor, ATC
1000 pF, B Case Chip Capacitor, ATC
0.1 pF, B Case Chip Capacitor, ATC
3 Turns, 27 AWG, 0.087
″
OD, 0.050
″
ID,
0.053
″
Long, 6.0 nH
5 Turns, 27 AWG, 0.087
″
OD, 0.050
″
ID,
0.091
″
Long, 15 nH
9 Turns, 26 AWG, 0.080
″
OD, 0.046
″
ID,
0.170
″
Long, 30.8 nH
4 Turns, 27 AWG, 0.087
″
OD, 0.050
″
ID,
0.078
″
Long, 10 nH
L2
L3, L4
L5
R1, R2, R3,
R4, R5, R6
W1, W2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Board
12
, 1/8 W Fixed Film Chip Resistor,
0.08
″
x 0.13
″
Berrylium Copper, 0.010
″
x 0.110
″
x 0.210
″
0.122
″
x 0.08
″
Microstrip
0.650
″
x 0.08
″
Microstrip
0.160
″
x 0.08
″
Microstrip
0.030
″
x 0.08
″
Microstrip
0.045
″
x 0.08
″
Microstrip
0.291
″
x 0.08
″
Microstrip
0.483
″
x 0.330
″
Microstrip
0.414
″
x 0.330
″
Microstrip
0.392
″
x 0.08
″
Microstrip
0.070
″
x 0.08
″
Microstrip
1.110
″
x 0.08
″
Microstrip
1 = 0.03 Glass Teflon
, Arlon GX–0300–55–22,
2 oz Copper, 3 x 5
″
Dimenson, 0.030
″
,
ε
r = 2.55
DC
SUPPLY
RF
OUTPUT
相关PDF资料 |
PDF描述 |
|---|---|
| MRF282S | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF282Z | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF284 | RF Power Field-Effect Transistors |
| MRF284S | RF Power Field-Effect Transistors |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF282S | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF282SR1 | 功能描述:IC MOSFET RF N-CHAN NI-200S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF282Z | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF282ZR1 | 功能描述:射频MOSFET电源晶体管 RF PWR FET SOE PKG RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF284 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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