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参数资料
| 型号： | MRF282 |
| 厂商： | Motorola, Inc. |
| 英文描述： | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| 中文描述： | 横向N沟道宽带RF功率MOSFET |
| 文件页数： | 7/11页 |
| 文件大小： | 142K |
| 代理商： | MRF282 |
7
MRF282S MRF282Z
MOTOROLA RF DEVICE DATA
f, FREQUENCY MHz)
2000
1970
1950
1930
14
12
11
10
39
37
36
35
C
I
G
13
38
Gps
VSWR
η
Pout = 10 W (PEP)
VDD = 26 Vdc
IDQ = 75 mA
1990
1.6:1
1.2:1
I
Figure 10. Class A DC Safe Operating Area
VDD, DRAIN SUPPLY VOLTAGE (Vdc)
Figure 11. Capacitance versus
Drain Source Voltage
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
1.5
.5
0
28
24
20
16
12
8
4
0
Tflange = 75
°
C
Tflange = 100
°
C
TJ = 175
°
C
28
12
20
4
0
100
1.0
0.1
Figure 12. Class A Third Order Intercept Point
Pin, INPUT POWER (dBm)
40
30
20
10
60
40
20
0
–20
–40
C
P
2
1
10
VDD = 26 Vdc
ID = 600 mAdc
f1 = 2000.0 MHz
f2 = 2000.1 MHz
3rd Order
Ciss
24
Figure 13. Performance in Broadband Circuit
Coss
Crss
16
8
Figure 14. MTBF Factor versus
Junction Temperature
TJ, JUNCTION TEMPERATURE (
°
C)
This graph displays calculated MTBF in hours x ampere2 drain cur-
ent. Life tests at elevated temperature have correlated to better than
±
10% of the theoretical prediction for metal failure. Divide MTBF
factor by ID2 for MTBF in a particular application.
250
200
150
100
50
0
1.E+09
1.E+08
1.E+06
1.E+05
1.E+04
1.E+03
M
50
30
10
–10
–30
1.E+07
TOI POINT
1980
1960
1940
1.4:1
FUNDAMENTAL
2
相关PDF资料 |
PDF描述 |
|---|---|
| MRF282S | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF282Z | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF284 | RF Power Field-Effect Transistors |
| MRF284S | RF Power Field-Effect Transistors |
| MRF313 | HIGH-FREQUENCY TRANSISTOR NPN SILICON |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF282S | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF282SR1 | 功能描述:IC MOSFET RF N-CHAN NI-200S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF282Z | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF282ZR1 | 功能描述:射频MOSFET电源晶体管 RF PWR FET SOE PKG RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF284 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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