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参数资料
| 型号： | MRF321 |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | CASE 244-04, 4 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 184K |
| 代理商： | MRF321 |
The RF Line
NPN Silicon
RF Power Transistor
. . . designed primarily for wideband large–signal driver and predriver amplifier
stages in 200–500 MHz frequency range.
Guaranteed Performance at 400 MHz, 28 Vdc
Output Power = 10 Watts
Power Gain = 12 dB Min
Efficiency = 50% Min
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Gold Metallization System for High Reliability
Computer–Controlled Wirebonding Gives Consistent Input Impedance
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
33
Vdc
Collector–Base Voltage
VCBO
60
Vdc
Emitter–Base Voltage
VEBO
4.0
Vdc
Collector Current — Continuous
Collector Current — Peak
IC
1.1
1.5
Adc
Total Device Dissipation @ TA = 25°C (1)
Derate above 25
°C
PD
27
160
Watts
mW/
°C
Storage Temperature Range
Tstg
–65 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
6.4
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
V(BR)CEO
33
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
V(BR)CES
60
—
Vdc
Collector–Base Breakdown Voltage
(IC = 20 mAdc, IE = 0)
V(BR)CBO
60
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 2.0 mAdc, IC = 0)
V(BR)EBO
4.0
—
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
—
1.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 500 mA, VCE = 5.0 Vdc)
hFE
20
—
80
—
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
MRF321
10 W, 400 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 244–04, STYLE 1
Order this document
by MRF321/D
SEMICONDUCTOR TECHNICAL DATA
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF323 | 功能描述:射频双极电源晶体管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集电极/Base Gain hfe Min:40 最大工作频率:30 MHz 集电极—发射极最大电压 VCEO:25 V 发射极 - 基极电压 VEBO:4 V 集电极连续电流:20 A 最大直流电集电极电流: 功率耗散:250 W 封装 / 箱体:Case 211-11 封装:Tray |
| MRF325 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:BROADBAND RF POWER TRANSISTOR NPN SILICON |
| MRF326 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:BROADBAND RF POWER TRANSISTOR NPN SILICON |
| MRF327 | 制造商:M/A-COM Technology Solutions 功能描述:TRANS GP BJT NPN 33V 9A 4PIN CASE 316-01 - Bulk 制造商:M/A-COM TECHNOLOGY SOLUTIONS 功能描述:TRANS RF NPN 33V 9A 316-01 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF329 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:BROADBAND RF POWER TRANSISTOR NPN SILICON |
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