参数资料
型号: MRF5P21240HR6
厂商: Freescale Semiconductor
文件页数: 8/12页
文件大小: 577K
描述: MOSFET RF N-CHAN 28V 52W NI-1230
标准包装: 150
晶体管类型: LDMOS
频率: 2.11GHz
增益: 13dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 2.2A
功率 - 输出: 52W
电压 - 额定: 65V
封装/外壳: NI-1230
供应商设备封装: NI-1230
包装: 带卷 (TR)
MRF5P21240HR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
2200
5
15
2080
?50
40
10 ?25IRL
13 30Gps
6 ?45ACPR
8 ?35IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance
@ Pout
= 52 Watts Avg.
G
ps
, POWER GAIN (dB)
11 20VDD
= 28 Vdc, P
out
= 52 W (Avg.), I
DQ
= 2200 mA
2?Carrier W?CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
9 ?30PAR = 8.5 dB @ 0.01% Probability (CCDF)
?30
?5
?10
?15
?20
INPUT RETURN LOSS (dB)
IRL,
IM3 (dBc), ACPR (dBc)
?25
2100 2120 2140 2160 2180
14 35
12 25ηD
7 ?40
300
12
14
2
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two-Tone Power Gain versus
Output Power
G
ps
, POWER GAIN (dB)
13.5
13
12.5
100
10
IDQ
= 2640 mA
2420 mA
VDD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two?Tone Measurements, 10 MHz Tone Spacing
2200 mA
1980 mA
1760 mA
300
?55
?25
2
IDQ
= 2640 mA
2420 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
INTERMODULATION DISTORTION (dBc)
IMD,THIRD ORDER
VDD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two?Tone Measurements, 10 MHz Tone Spacing
?30
?35
?40
?45
?50
1980 mA
10 100
2200 mA
1760 mA
11030
?55
?25
0.1
7th Order
TWO?TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
INTERMODULATION DISTORTION (dBc)
IMD,
5th Order
3rd Order
?30
?35
?40
?45
?50
46
50
60
36
Ideal
P3dB = 55.03 dBm (318.24 W)
Actual
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
P
out
, OUTPUT POWER (dBm)
VDD
= 28 Vdc, I
DQ
= 2200 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
59
58
57
56
55
54
53
52
51
37 38 39 40 41 42 43 44 45
P1dB = 54.36 dBm (272.9 W)
η
D
, DRAIN
EFFICIENCY (%)
VDD
= 28 Vdc, P
out
= 240 W (PEP), I
DQ
= 2200 mA
Two?Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
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