- 您现在的位置：买卖IC网 > Datasheet目录92 > MRF6P18190HR6 (Freescale Semiconductor)MOSFET RF N-CHAN 28V 44W NI-1230 Datasheet资料下载
参数资料
| 型号： | MRF6P18190HR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 2/11页 |
| 文件大小： | 784K |
| 描述： | MOSFET RF N-CHAN 28V 44W NI-1230 |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 150 |
| 晶体管类型： | LDMOS |
| 频率： | 1.87GHz |
| 增益： | 15.9dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 2A |
| 功率 - 输出： | 44W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-1230 |
| 供应商设备封装： | NI-1230 |
| 包装： | 带卷 (TR) |
10
RF Device Data
Freescale Semiconductor
MRF6P18190HR6
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
2
Dec. 2008
?
Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
?
Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
?
Removed Total Device Dissipation from Max Ratings table as data was redundant
(information already
provided in Thermal Characteristics table), p. 1
?
Operating Junction Temperature increased from 200°
to 225°C in Maximum Ratings table and related
“Continuous use of maximum temperature will affect MTTF” footnote added, p. 1
?
Corrected VDS
to VDD
in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2
?
Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
?
Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
?
Removed lower voltage test from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
?
Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2
and listed
operating characteristics and location
of MTTF calculator for device, p. 7
?
Updated Zsource
and Zload
definitions, Fig. 15, Series Equivalent Source and Load Impedance, p. 8
?
Added Product Documentation and Revision History, p. 10
3
Dec. 2010
?
Corrected data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, and Product Discontinuance Notification number, PCN14260, adding applicable
overlay, p. 1, 2
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
相关PDF资料 |
PDF描述 |
|---|---|
| MRF6P21190HR6 | MOSFET RF N-CHAN 28V 44W NI-1230 |
| MRF6P23190HR6 | MOSFET RF N-CHAN 28V 40W NI-1230 |
| MRF6P24190HR5 | MOSFET RF N-CH 28V 190W NI-1230 |
| MRF6P27160HR6 | MOSFET RF N-CHAN 28V 35W NI-1230 |
| MRF6P3300HR5 | MOSFET RF N-CH 32V 300W NI-860C3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6P21190HR5 | 功能描述:射频MOSFET电源晶体管 HV6 44W W/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6P21190HR6 | 功能描述:射频MOSFET电源晶体管 HV6 44W W/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6P21190HR6_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P21190HR6_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P23190H_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
发布紧急采购，3分钟左右您将得到回复。