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参数资料
| 型号： | MRF6P18190HR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 4/11页 |
| 文件大小： | 784K |
| 描述： | MOSFET RF N-CHAN 28V 44W NI-1230 |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 150 |
| 晶体管类型： | LDMOS |
| 频率： | 1.87GHz |
| 增益： | 15.9dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 2A |
| 功率 - 输出： | 44W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-1230 |
| 供应商设备封装： | NI-1230 |
| 包装： | 带卷 (TR) |
2
RF Device Data
Freescale Semiconductor
MRF6P18190HR6
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
III (Minimum)
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(VDS
=68Vdc,VGS
=0Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
=28Vdc,VGS
=0Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(1)
(VDS
=10Vdc,ID
= 250
μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(3)
(VDD
=28Vdc,ID
= 2000 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain--Source On--Voltage
(1)
(VGS
=10Vdc,ID
=2.2Adc)
VDS(on)
—
0.21
—
Vdc
Dynamic Characteristics
(2,3)
Reverse Transfer Capacitance
(VDS
=28Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
—
1.5
—
pF
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 2000 mA, Pout
= 44 W Avg., f1 = 1867.5 MHz, f2 =
1877.5 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @
±5MHz
Offset. IM3 measured in 3.84 MHz Bandwidth @
±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
14.5
15.9
17.5
dB
Drain Efficiency
ηD
25.5
27.5
—
%
Intermodulation Distortion
IM3
—
-- 3 7
-- 3 5
dBc
Adjacent Channel Power Ratio
ACPR
—
-- 4 1
-- 3 8
dBc
Input Return Loss
IRL
—
-- 1 2
-- 9
dB
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push--pull configuration.
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6P21190HR5 | 功能描述:射频MOSFET电源晶体管 HV6 44W W/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6P21190HR6 | 功能描述:射频MOSFET电源晶体管 HV6 44W W/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6P21190HR6_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P21190HR6_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P23190H_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
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