参数资料
型号: MRF6P21190HR6
厂商: Freescale Semiconductor
文件页数: 10/11页
文件大小: 707K
描述: MOSFET RF N-CHAN 28V 44W NI-1230
产品变化通告: RF Devices Discontinuation 01/Jul/2010
标准包装: 150
晶体管类型: LDMOS
频率: 2.11GHz
增益: 15.5dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 1.9A
功率 - 输出: 44W
电压 - 额定: 68V
封装/外壳: NI-1230
供应商设备封装: NI-1230
包装: 带卷 (TR)
8
RF Device Data
Freescale Semiconductor
MRF6P21190HR6
Figure 15. Series Equivalent Source and Load Impedance
f
MHz
Zsource
?
Zload
?
2000
2110
2140
3.43 -- j10.06
3.39 -- j6.07
3.22 -- j7.13
5.63 -- j12.88
4.36 -- j10.02
4.56 -- j8.49
VDD
=28Vdc,IDQ
= 1900 mA, Pout
=44WAvg.
Zo
=25?
Zload
f = 2200 MHz
f = 2000 MHz
Zsource
2170
2200 3.69 -- j5.165.42 -- j6.67
3.76 -- j5.45
5.11 -- j7.41
f = 2000 MHz
f = 2200 MHz
Zsource
= Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Zsource
Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
--
-- +
+
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
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MRF6P21190HR6_06 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P21190HR6_10 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6P23190H_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6P23190HR5 功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6P23190HR6 功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray