- 您现在的位置：买卖IC网 > PDF目录98038 > MRF6S18060MBR1 (FREESCALE SEMICONDUCTOR INC) L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 PDF资料下载
参数资料
| 型号： | MRF6S18060MBR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封装： | PLASTIC, CASE 1484-04, 4 PIN |
| 文件页数： | 15/20页 |
| 文件大小： | 702K |
| 代理商： | MRF6S18060MBR1 |
AR
C
HIVE
INF
O
RMA
TI
O
N
ARCHIVE
INFORMA
TION
4
RF Device Data
Freescale Semiconductor
MRF6S18060MR1 MRF6S18060MBR1
Z1
0.250″ x 0.083″ Microstrip
Z2*
0.950″ x 0.083″ Microstrip
Z3*
0.250″ x 0.083″ Microstrip
Z4*
0.315″ x 0.083″ Microstrip
Z5
0.365″ x 1.000″ Microstrip
Z6
0.680″ x 0.080″ Microstrip
Z7, Z8
0.115″ x 1.000″ Microstrip
Z9
0.485″ x 1.000″ Microstrip
Z10*
0.500″ x 0.083″ Microstrip
Z11*
0.895″ x 0.083″ Microstrip
Z12
0.250″ x 0.083″ Microstrip
Z13
0.200″ x 0.080″ Microstrip
PCB
Taconic TLX8-0300, 0.030″, εr = 2.55
* Variable for tuning
Figure 1. MRF6S18060MR1(MBR1) Test Circuit Schematic — 1900 MHz
VBIAS
RF
INPUT
RF
OUTPUT
Z1
C3
C4
Z3
DUT
Z9
Z10
Z11
C1
R3
C11
C9
+
Z2
R1
C10
VSUPPLY
R2
C5
C6
Z8
C2
Z4
Z5
Z7
Z6
Z12
Z13
C7
C8
Table 6. MRF6S18060MR1(MBR1) Test Circuit Component Designations and Values — 1900 MHz
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4
6.8 pF 100B Chip Capacitors
100B6R8CW
ATC
C5
1.5 pF 100B Chip Capacitor
100B1R5BW
ATC
C6
1.8 pF 100B Chip Capacitor
100B1R8BW
ATC
C7, C8
1 pF 100B Chip Capacitors
100B1R0BW
ATC
C9, C10
10 μF Chip Capacitors (2220)
C5750X5R1H106MT
TDK
C11
220 μF, 63 V Electrolytic Capacitor, Radial
13668221
Philips
R1, R2
10 kW, 1/4 W Chip Resistors (1206)
R3
10 W, 1/4 W Chip Resistor (1206)
相关PDF资料 |
PDF描述 |
|---|---|
| MRF6S18060NBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6S18060NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6S18100NBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6S18100NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6S18140HR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S18060NBR1 | 功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S18060NR1 | 功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S18060NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S18100NBR1 | 功能描述:射频MOSFET电源晶体管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S18100NR1 | 功能描述:射频MOSFET电源晶体管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。