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参数资料
| 型号： | MRF6S18060MBR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封装： | PLASTIC, CASE 1484-04, 4 PIN |
| 文件页数： | 18/20页 |
| 文件大小： | 702K |
| 代理商： | MRF6S18060MBR1 |
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MRF6S18060MR1 MRF6S18060MBR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 1900 MHz
Figure 7. Power Gain and Drain Efficiency
versus CW Output Power
Figure 8. Error Vector Magnitude versus
Frequency
100
10
17
1
0
70
VDD = 26 Vdc
IDQ = 600 mA
f = 1960 MHz
TC = 30_C
30
_C
25
_C
85
_C
10
16
15
14
13
12
11
60
50
40
30
20
10
Pout, OUTPUT POWER (WATTS) CW
Figure 9. Error Vector Magnitude and Drain
Efficiency versus Output Power
55
60
65
70
75
1920
80
Figure 10. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
f, FREQUENCY (MHz)
Pout = 35 W Avg.
25 W Avg.
10 W Avg.
VDD = 26 Vdc
IDQ = 450 mA
Pout, OUTPUT POWER (WATTS) AVG.
100
4
12
VDD = 26 Vdc
IDQ = 450 mA
f = 1960 MHz
8
6
0
10
1
2
20
60
40
30
0
10
TC = 30_C, 25_C
85
_C
Gps
TC = 30_C
25
_C
85
_C
75
45
0
Pout, OUTPUT POWER (WATTS) AVG.
50
55
60
65
70
10
Figure 11. Spectral Regrowth at 400 kHz
versus Output Power
η
D
,DRAIN
EFFICIENCY
(%)
ηD
η
D
,DRAIN
EFFICIENCY
(%)
ηD
G
ps
,POWER
GAIN
(dB)
EVM,
ERROR
VECT
OR
MAGNITUDE
(%
rms)
2020
1
4
1900
3
2.5
1.5
1980
1960
1940
1920
3.5
2
EVM,
ERROR
VECT
OR
MAGNITUDE
(%
rms)
SPECTRAL
REGROWTH
@
400
kHz
(dBc)
SPECTRAL
REGROWTH
@
400
kHz
AND
600
kHz
(dBc)
25
_C
85
_C
2000
10
50
EVM
30
_C
25
_C
85
_C
1940
1960
1980
2000
VDD = 26 Vdc
IDQ = 450 mA
f = 1960 MHz
Pout = 35 W Avg.
25 W Avg.
10 W Avg.
35 W Avg.
25 W Avg.
10 W Avg.
f, FREQUENCY (MHz)
20
30
40
50
60
VDD = 26 Vdc
IDQ = 450 mA
f = 1960 MHz
TC = 85_C
25
_C
30
_C
85
55
0
Pout, OUTPUT POWER (WATTS) AVG.
60
70
75
80
10
Figure 12. Spectral Regrowth at 600 kHz
versus Output Power
SPECTRAL
REGROWTH
@
600
kHz
(dBc)
20
30
40
50
60
VDD = 26 Vdc
IDQ = 450 mA
f = 1960 MHz
65
SR 400 kHz
SR 600 kHz
相关PDF资料 |
PDF描述 |
|---|---|
| MRF6S18060NBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6S18060NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6S18100NBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6S18100NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6S18140HR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S18060NBR1 | 功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S18060NR1 | 功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S18060NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S18100NBR1 | 功能描述:射频MOSFET电源晶体管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S18100NR1 | 功能描述:射频MOSFET电源晶体管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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