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参数资料
| 型号： | MRF6S18060MBR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封装： | PLASTIC, CASE 1484-04, 4 PIN |
| 文件页数： | 17/20页 |
| 文件大小： | 702K |
| 代理商： | MRF6S18060MBR1 |
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RF Device Data
Freescale Semiconductor
MRF6S18060MR1 MRF6S18060MBR1
TYPICAL CHARACTERISTICS — 1900 MHz
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
f, FREQUENCY (MHz)
13
1900
47
Gps
VDD = 26 Vdc
IDQ = 600 mA
18
57
55
53
51
49
2020
IRL
Figure 3. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 60 Watts
20
0
5
10
15
25
η
D
,DRAIN
EFFICIENCY
(%)
17
16
15
14
ηD
1920
1940
1960
1980
2000
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
f, FREQUENCY (MHz)
13
1900
32
Gps
VDD = 26 Vdc
IDQ = 600 mA
18
42
40
38
36
2020
IRL
Figure 4. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 30 Watts
20
0
5
10
15
25
η
D
,DRAIN
EFFICIENCY
(%)
17
16
15
14
ηD
1920
1940
1960
1980
2000
Figure 5. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS)
VDD = 26 Vdc
f = 1960 MHz
750 mA
IDQ = 900 mA
10
12
1
17
15
14
13
100
G
ps
,POWER
GAIN
(dB)
16
600 mA
450 mA
300 mA
40
12
0
17
16
15
14
13
20
100
60
80
Figure 6. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
VDD = 32 V
26 V
IDQ = 600 mA
f = 1960 MHz
G
ps
,POWER
GAIN
(dB)
24 V
20 V
16 V
12 V
34
相关PDF资料 |
PDF描述 |
|---|---|
| MRF6S18060NBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6S18060NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6S18100NBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6S18100NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6S18140HR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S18060NBR1 | 功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S18060NR1 | 功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S18060NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S18100NBR1 | 功能描述:射频MOSFET电源晶体管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S18100NR1 | 功能描述:射频MOSFET电源晶体管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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