参数资料
型号: MRF6S19100HR3
厂商: Freescale Semiconductor
文件页数: 10/11页
文件大小: 407K
描述: MOSFET RF N-CHAN 28V 22W NI-780
标准包装: 250
晶体管类型: LDMOS
频率: 1.99GHz
增益: 16.1dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 900mA
功率 - 输出: 22W
电压 - 额定: 68V
封装/外壳: NI-780
供应商设备封装: NI-780
包装: 带卷 (TR)
8
RF Device Data
Freescale Semiconductor
MRF6S19100HR3 MRF6S19100HSR3
Figure 15. Series Equivalent Source and Load Impedance
f
MHz
Zsource
Ω
Zload
Ω
1930
1960
1990
2.26 - j2.31
2.14 - j2.00
2.22 - j2.13
1.57 - j3.50
1.83 - j3.29
2.34 - j3.71
VDD
= 28 Vdc, I
DQ
= 900 mA, P
out
= 22 W Avg.
Zo
= 5
Ω
Zload
Zsource
f = 1930 MHz
f = 1990 MHz
Zsource
= Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Zsource
Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
f = 1930 MHz
f = 1990 MHz
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