- 您现在的位置：买卖IC网 > PDF目录21725 > MRF6S19100HR3 (Freescale Semiconductor)MOSFET RF N-CHAN 28V 22W NI-780 PDF资料下载
参数资料
| 型号： | MRF6S19100HR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 8/11页 |
| 文件大小： | 407K |
| 描述： | MOSFET RF N-CHAN 28V 22W NI-780 |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS |
| 频率： | 1.99GHz |
| 增益： | 16.1dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 900mA |
| 功率 - 输出： | 22W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-780 |
| 供应商设备封装： | NI-780 |
| 包装： | 带卷 (TR) |
6
RF Device Data
Freescale Semiconductor
MRF6S19100HR3 MRF6S19100HSR3
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
1 10010
?60
0
0.1
7th Order
TWO?TONE SPACING (MHz)
VDD
= 28 Vdc, P
out
= 100 W (PEP), I
DQ
= 900 mA
Two?Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
5th Order
3rd Order
?10
?30
?40
?50
Figure 8. Pulsed CW Output Power versus
Input Power
Figure 9. 2-Carrier N-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
0 ?70
Pout, OUTPUT POWER (WATTS) AVG.
60
?10
50
?20
40
?30
30
?40
10
?60
4 20010 100
?50
20
VDD= 28 Vdc, IDQ
= 900 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2?Carrier N?CDMA, 2.5 MHz Carrier
Spacing, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
40
56
31
P3dB = 51.56 dBm (143.2 W)
Pin, INPUT POWER (dBm)
VDD
= 28 Vdc, I
DQ
= 900 mA
Pulsed CW, 8 μsec(on), 1
msec(off)
f = 1960 MHz
54
53
52
46
32 33 36 3734 35 38 39
Actual
Ideal
P1dB = 50.9 dBm (124.2 W)
55
48
30
10
17
0
70
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD
= 28 Vdc
IDQ
= 900 mA
f = 1960 MHz
3 200100
10
16
15
13
12
11
60
40
30
20
10
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
VDD
= 32 V
IM3
ηD
Gps
ACPR
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
IM3 (dBc), ACPR (dBc)
η
D
,
DRAIN EFFICIENCY (%)
Gps
ηD
G
ps
, POWER GAIN (dB)
200
6
18
0
16.5
10.5
9
25
12
15
28 V
IDQ
= 900 mA
f = 1960 MHz
P
out
, OUTPUT POWER (dBm)
G
ps
, POWER GAIN (dB)
?20
51
24 V
50
47
49
14
50
13.5
7.5
50 75 100 125 150 175
相关PDF资料 |
PDF描述 |
|---|---|
| MIN02-002DC430J-F | CAP MICA 43PF 300V 5% SMD |
| C3391-32.768 | OSC 32.768 MHZ 3.3V +/-25PPM SMD |
| MIN02-002DC390J-F | CAP MICA 39PF 300V 5% SMD |
| 171224K160F-F | CAP FILM 0.22UF 160VDC RADIAL |
| 160564J63D-F | CAP FILM 0.56UF 63VDC RADIAL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S19100HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S19100HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S19100HR5 | 功能描述:射频MOSFET电源晶体管 HV6 WCDMA 22W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19100HS | 制造商:Freescale Semiconductor 功能描述: |
| MRF6S19100HSR3 | 功能描述:射频MOSFET电源晶体管 HV6 WCDMA 22W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。