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| 型号： | MRF6S19100HR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 5/11页 |
| 文件大小： | 407K |
| 描述： | MOSFET RF N-CHAN 28V 22W NI-780 |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS |
| 频率： | 1.99GHz |
| 增益： | 16.1dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 900mA |
| 功率 - 输出： | 22W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-780 |
| 供应商设备封装： | NI-780 |
| 包装： | 带卷 (TR) |
MRF6S19100HR3 MRF6S19100HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6S19100HR3(HSR3) Test Circuit Schematic
Z7 0.091″
x 0.900
″
Microstrip
Z8 0.493″
x 0.900
″
Microstrip
Z9 0.440″
x 0.195
″
Microstrip
Z10 0.470″
x 0.084
″
Microstrip
Z11 0.735″
x 0.084
″
Microstrip
PCB Arlon CuClad 250GX-0300-55-22, 0.030″, εr
= 2.55
Z1 0.130″
x 0.084
″
Microstrip
Z2 0.360″
x 0.084
″
Microstrip
Z3 0.260″
x 0.084
″
Microstrip
Z4 0.950″
x 0.084
″
Microstrip
Z5 0.457″
x 0.940
″
Microstrip
Z6 0.083″
x 0.940
″
Microstrip
C5
R2
VBIAS
C4
+
R1
RF
INPUT
DUT
Z1
Z2
Z3
Z4
Z5
Z6
C1
C2
C3
Z7
Z8
Z9
Z10
Z11
RF
OUTPUT
C6
C7
VSUPPLY
C8
+
C9
+
C10
C11
+
C12
+
B1
Table 5. MRF6S19100HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
RF Bead
2743019447
Fair-Rite
C1, C2
0.6-4.5 pF Variable Capacitors, Gigatronics
27271SL
Johanson Dielectrics
C3
15 pF Chip Capacitor
ATC100B150CT500XT
ATC
C4, C7
5.6 pF Chip Capacitors
ATC100B5R6JT500XT
ATC
C5
1 μF, 50 V Tantalum Chip Capacitor
T491C105K050AT
Kemet
C6
43 pF Chip Capacitor
ATC100B430CT500XT
ATC
C8, C10
22 μF, 35 V Tantalum Chip Capacitors
T491X226K035AT
Kemet
C9
10 μF, 35 V Tantalum Chip Capacitor
T491C106K035AT
Kemet
C11
0.1 μF Chip Capacitor
C1825C14J5RAC
Kemet
C12
100 μF, 50 V Electrolytic Capacitor
MCHT101M1HB-1017-RH
Multicomp
R1
12 Ω, 1/4 W Chip Resistor
CRCW120612R0FKEA
Vishay
R2
2 k, 1/4 W Chip Resistor
CRCW12062001FKEA
Vishay
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S19100HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S19100HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S19100HR5 | 功能描述:射频MOSFET电源晶体管 HV6 WCDMA 22W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19100HS | 制造商:Freescale Semiconductor 功能描述: |
| MRF6S19100HSR3 | 功能描述:射频MOSFET电源晶体管 HV6 WCDMA 22W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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