参数资料
型号: MRF6S19100HR3
厂商: Freescale Semiconductor
文件页数: 6/11页
文件大小: 407K
描述: MOSFET RF N-CHAN 28V 22W NI-780
标准包装: 250
晶体管类型: LDMOS
频率: 1.99GHz
增益: 16.1dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 900mA
功率 - 输出: 22W
电压 - 额定: 68V
封装/外壳: NI-780
供应商设备封装: NI-780
包装: 带卷 (TR)
4
RF Device Data
Freescale Semiconductor
MRF6S19100HR3 MRF6S19100HSR3
Figure 2. MRF6S19100HR3(HSR3) Test Circuit Component Layout
+
VDD
VGG
B1
R1
R2
C5
C4
C1 C2 C3
C7
C8 C9
C1
1
C10
C12
C6
CUT OUT AREA
MRF6S19100H/HS
Rev 2
-
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
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相关代理商/技术参数
参数描述
MRF6S19100HR3_06 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HR3_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HR5 功能描述:射频MOSFET电源晶体管 HV6 WCDMA 22W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S19100HS 制造商:Freescale Semiconductor 功能描述:
MRF6S19100HSR3 功能描述:射频MOSFET电源晶体管 HV6 WCDMA 22W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray