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参数资料
| 型号： | MRF6S19200HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 10/12页 |
| 文件大小： | 404K |
| 描述： | MOSFET RF N-CH 56W 28V NI780S |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 1.93GHz |
| 增益： | 17.9dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.6A |
| 功率 - 输出： | 56W |
| 电压 - 额定： | 66V |
| 封装/外壳： | NI-780S |
| 供应商设备封装： | NI-780S |
| 包装： | 带卷 (TR) |
MRF6S19200HR3 MRF6S19200HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD, INTERMODULATION DISTORTION (dBc)
?70
?10
1 10010
?40
?50
?30
?20
7th Order
5th Order
3rd Order
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWO?TONE SPACING (MHz)
Figure 9. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
?1
?3
?5
40
Actual
Ideal
0
?2
?4
OUTPUT COMPRESSION AT THE 0.01%
PROBABILITY ON CCDF (dB)
1 10010
IM3?L
IM3?U
?10
?20
?40
IMD, INTERMODULATION DISTORTION (dBc)
30
50
200
VDD
= 28 Vdc, I
DQ
= 1600 mA
f1 = 1955 MHz, f2 = 1965 MHz
Two?Tone Measurements, 10 MHz Tone Spacing
?50
?30
IM5?U
IM5?L
IM7?L
IM7?U
80
90
15
45
40
35
30
25
20
η
D
,
DRAIN EFFICIENCY (%)
?3 dB = 87.05 W
200
16
20
0
40
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD
= 28 Vdc
IDQ
= 1600 mA
f = 1960 MHz
TC
= ?30
C
25C
85C
10
1
19
18
17
30
20
10
η
D
,
DRAIN EFFICIENCY (%)
Gps
ηD
G
ps
, POWER GAIN (dB)
100
?30C
25C
85C
?70
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
, POWER GAIN (dB)
16.5
18.5
02040 60 80 100 120 140
17
17.5
18
28 V
IDQ
= 1600 mA
f = 1960 MHz
VDD
= 24 V
32 V
?60
?60
60 70
?2 dB = 62.72 W
?1 dB = 43.38 W
ηD
VDD
= 28 Vdc, P
out
= 130 W (PEP), I
DQ
= 1600 mA
Two?Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
VDD
= 28 Vdc, I
DQ
= 1600 mA, f = 1960 MHz
Single?Carrier W?CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
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