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| 型号： | MRF6S21100NR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 11/20页 |
| 文件大小： | 1456K |
| 描述： | MOSFET RF N-CH 28V 23W TO270-4 |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 2.11GHz |
| 增益： | 14.5dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.05A |
| 功率 - 输出： | 23W |
| 电压 - 额定： | 68V |
| 封装/外壳： | TO-270AB |
| 供应商设备封装： | TO-270 WB-4 |
| 包装： | 带卷 (TR) |
MRF6S21100NR1 MRF6S21100NBR1
19
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
?
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
?
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
2
Jan. 2007
?
Added ?TD--SCDMA? to data sheet description paragraph, p. 1
?
Removed Total Device Dissipation from Max Ratings table as data was redundant
(information already
provided in Thermal Characteristics table), p. 1
?
Added VGG(Q)
and removed Min and Max value for VGS(Q)
in On Characteristics table to account for the
test fixture?s resistor divider network, p. 2
?
Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
?
Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part numbers,
p. 3
?
Adjusted scale for Fig. 5, Two--Tone Power Gain versus Output Power, to better match the device?s
capabilities, p. 5
?
Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
?
Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2
and listed
operating characteristics and location
of MTTF calculator for device, p. 7
?
Added TD--SCDMA test circuit schematic, component
designations and values, component layout, typical
characteristic curves, test signal and series impedance, p. 9--12
?
Added Product Documentation and Revision History, p. 17
3
Dec. 2008
?
Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
?
Changed Storage Temperature Range in Max Ratings table from --65 to +175 to --65 to +150 for
standardization across products, p. 1
?
Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
?
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
?Continuous use at maximum temperature will affect MTTF? footnote added and changed 200°C to 225°C
in Capable Plastic Package bullet, p. 1
?
Corrected VDS
to VDD
in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2
?
Updated PCB information to show more specific material details, Figs. 1, 16, Test Circuit Schematic, p. 3,
9
?
Updated Part Numbers in Tables 6, 7, Component Designations and Values, to latest RoHS compliant
part numbers, p. 3, 9
?
Corrected Fig. 15, Series Equivalent Source and Load Impedance?s Zsource
and Zload
copy to
single--ended, p. 8
?
Replaced Case Outline 1486--03, Issue C, with 1486--03, Issue D, p. 13--15. Added pin numbers 1 through
4 on Sheet 1.
?
Replaced Case Outline 1484--04, Issue D, with 1484--04, Issue E, p. 16--18. Added pin numbers 1 through
4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and
Pin 2 designations.
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
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| MRF6S21140HSR5 | MOSFET RF N-CHAN 28V 30W NI-880S |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S21100NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S21140HR3 | 功能描述:射频MOSFET电源晶体管 HV6 LDMOS 30W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S21140HR3_07 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S21140HR3_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF6S21140HR5 | 功能描述:射频MOSFET电源晶体管 HV6 LDMOS 30W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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