- 您现在的位置：买卖IC网 > Datasheet目录93 > MRF6S21100NR1 (Freescale Semiconductor)MOSFET RF N-CH 28V 23W TO270-4 Datasheet资料下载
参数资料
| 型号： | MRF6S21100NR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 12/20页 |
| 文件大小： | 1456K |
| 描述： | MOSFET RF N-CH 28V 23W TO270-4 |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 2.11GHz |
| 增益： | 14.5dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.05A |
| 功率 - 输出： | 23W |
| 电压 - 额定： | 68V |
| 封装/外壳： | TO-270AB |
| 供应商设备封装： | TO-270 WB-4 |
| 包装： | 带卷 (TR) |
2
RF Device Data
Freescale Semiconductor
MRF6S21100NR1 MRF6S21100NBR1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
°C
Table 5. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
=68Vdc,VGS
=0Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
=28Vdc,VGS
=0Vdc)
IDSS
?
?
1
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 330
μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDS
=28Vdc,ID
= 1050 mAdc)
VGS(Q)
?
2.8
?
Vdc
Fixture Gate Quiescent Voltage
(1)
(VDD
=28Vdc,ID
= 1050 mAdc, Measured in Functional Test)
VGG(Q)
2.2
3.1
4.4
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=3.3Adc)
VDS(on)
?
0.24
?
Vdc
Dynamic Characteristics
(2)
Reverse Transfer Capacitance
(VDS
=28Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
?
1.5
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 1050 mA, Pout
=23WAvg.,f1=2112.5MHz,f2=
2157.5 MHz, 2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in 3.84 MHz Channel Bandwidth @
±5MHz
Offset. IM3 measured in 3.84 MHz Bandwidth @
±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
13
14.5
16
dB
Drain Efficiency
ηD
24
25.5
36
%
Intermodulation Distortion
IM3
-- 4 7
-- 3 7
-- 3 5
dBc
Adjacent Channel Power Ratio
ACPR
-- 5 0
-- 4 0
-- 3 8
dBc
Input Return Loss
IRL
?
-- 1 2
-- 1 0
dB
1. VGG
= 11/10 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part is internally matched both on input and output.
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
相关PDF资料 |
PDF描述 |
|---|---|
| MRF6S21140HSR5 | MOSFET RF N-CHAN 28V 30W NI-880S |
| MRF6S21190HSR5 | MOSFET RF N-CH 54W NI880S |
| MRF6S23100HSR5 | MOSFET RF N-CHAN 28V 20W NI-780S |
| MRF6S23140HSR5 | MOSFET RF N-CHAN 28W 28W NI-880S |
| MRF6S24140HS | IC MOSFET RF N-CHAN NI-880S |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S21100NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S21140HR3 | 功能描述:射频MOSFET电源晶体管 HV6 LDMOS 30W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S21140HR3_07 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S21140HR3_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF6S21140HR5 | 功能描述:射频MOSFET电源晶体管 HV6 LDMOS 30W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。