参数资料
型号: MRF6S21100NR1
厂商: Freescale Semiconductor
文件页数: 16/20页
文件大小: 1456K
描述: MOSFET RF N-CH 28V 23W TO270-4
产品变化通告: RF Devices Discontinuation 01/Jul/2010
标准包装: 500
晶体管类型: LDMOS
频率: 2.11GHz
增益: 14.5dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 1.05A
功率 - 输出: 23W
电压 - 额定: 68V
封装/外壳: TO-270AB
供应商设备封装: TO-270 WB-4
包装: 带卷 (TR)
MRF6S21100NR1 MRF6S21100NBR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
, POWER GAIN (dB)
G
ps
, POWER GAIN (dB) G
ps
, POWER GAIN (dB)
2240
13
15
2060
2080 22002180 2220
-- 4 6
28
f, FREQUENCY (MHz)
Figure 3. 2--Carrier W--CDMA Broadband Performance @ Pout
= 22.5 Watts Avg.
-- 1 4
-- 9
-- 1 0
INPUT RETURN LOSS (dB)
IRL,
IM3 (dBc), ACPR (dBc)
-- 1 3
η
D
, DRAIN
EFFICIENCY (%)
14.8
27
13.8
-- 3 1
13.6
-- 3 4
13.4
-- 4 0
13.2
-- 4 3
2100 2120 2140 2160
14
14.2
14.4
14.6
26
25
24
-- 3 7
-- 11
-- 1 2
VDD=28Vdc,Pout
= 22.5 W (Avg.), IDQ
= 1050 mA
2--Carrier W--CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
IRL
Gps
ACPR
IM3
ηD
2240
12.2
14.2
2060
2080 22002180 2220
-- 3 4
38
f, FREQUENCY (MHz)
Figure 4. 2--Carrier W--CDMA Broadband Performance @ Pout
= 45 Watts Avg.
-- 1 4
-- 9
-- 1 0
INPUT RETURN LOSS (dB)
IRL,
IM3 (dBc), ACPR (dBc)
-- 1 3
η
D
, DRAIN
EFFICIENCY (%)
14
37
13
-- 2 4
12.8
-- 2 6
12.6
-- 3 0
12.4
-- 3 2
2100 2120 2140 2160
13.2
13.4
13.6
13.8
36
35
34
-- 2 8
-- 11
-- 1 2
VDD=28Vdc,Pout
=45W(Avg.),IDQ
= 1050 mA
2--Carrier W--CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
IRL
ACPR
IM3
ηD
300
10
16
0.1
IDQ
= 1575 mA
1312 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two--Tone Power Gain versus
Output Power
VDD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
525 mA
787 mA
15
14
13
12
11
100
10
1
1050 mA
0.1 1 300100
-- 6 0
-- 1 0
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
VDD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
-- 2 0
-- 3 0
-- 4 0
-- 5 0
10
INTERMODULATION D
ISTORTION (dBc)
IMD, THIRD ORDER
IDQ
= 525 mA
1312 mA
787 mA
1050 mA
1575 mA
Gps
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
相关PDF资料
PDF描述
MRF6S21140HSR5 MOSFET RF N-CHAN 28V 30W NI-880S
MRF6S21190HSR5 MOSFET RF N-CH 54W NI880S
MRF6S23100HSR5 MOSFET RF N-CHAN 28V 20W NI-780S
MRF6S23140HSR5 MOSFET RF N-CHAN 28W 28W NI-880S
MRF6S24140HS IC MOSFET RF N-CHAN NI-880S
相关代理商/技术参数
参数描述
MRF6S21100NR1_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21140HR3 功能描述:射频MOSFET电源晶体管 HV6 LDMOS 30W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S21140HR3_07 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21140HR3_10 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF6S21140HR5 功能描述:射频MOSFET电源晶体管 HV6 LDMOS 30W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray