参数资料
型号: MRF6S23100HSR5
厂商: Freescale Semiconductor
文件页数: 8/11页
文件大小: 411K
描述: MOSFET RF N-CHAN 28V 20W NI-780S
产品变化通告: RF Devices Discontinuation 28/Jun/2011
标准包装: 50
晶体管类型: LDMOS
频率: 2.3GHz
增益: 15.4dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 1A
功率 - 输出: 20W
电压 - 额定: 68V
封装/外壳: NI-780S
供应商设备封装: NI-780S
包装: 带卷 (TR)
6
RF Device Data
Freescale Semiconductor
MRF6S23100HR3 MRF6S23100HSR3
TYPICAL CHARACTERISTICS
11
18
0.1
0
70
Pout, OUTPUT POWER (WATTS) CW
10
16
14
12
60
C
50
C
40
30
η
D
, DRAIN EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
15
13
VDD
= 28 Vdc
IDQ
= 1000 mA
f = 2350 MHz
ηD
Gps
IM3 (dBc), ACPR (dBc)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
1 10010
-60
-1 0
0.1
7th Order
TWO-T ONE SPACING (MHz)
VDD
= 28 Vdc, P
out
= 100 W (PEP), I
DQ
= 1000 mA
Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 2350 MHz
5th Order
3rd Order
-2 0
-3 0
-4 0
Figure 8. Pulsed CW Output Power versus
Input Power
Figure 9. 2-Carrier W-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
0
-55
Pout, OUTPUT POWER (WATTS) AVG.
35
-20
C
-30
25
20
-35
10
10 100
-40
40
57
P3dB = 51.88 dBm (154.14 W)
Pin, INPUT POWER (dBm)
VDD
= 28 Vdc, I
DQ
= 1000 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2350 MHz
53
49
47
33 3634
35
Actual
Ideal
55
51
32
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
IM3
Gps
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
P
out
, OUTPUT POWER (dBm)
G
ps
, POWER GAIN (dB)
160
10
16
0
12
11
20
13
14
IDQ
= 1000 mA
f = 2350 MHz
30
-45
ηD
5 -50ACPR
25C
VDD
= 24
V
28
V
32
V
38
1
-25
40 60 80
10
20
P1dB = 51.18 dBm (131.19 W)
15
TC
= 25
C
-30C
85
25C
TC
= -30
C
85C
25C
85
-30C
100
25
15
100
VDD= 28 Vdc, IDQ
= 1000 mA
f1 = 2345 MHz, f2 = 2355 MHz
2-Carrier W-CDMA
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
39
37
-30C
85C
25C
17
1
120 140
相关PDF资料
PDF描述
MRF6S23140HSR5 MOSFET RF N-CHAN 28W 28W NI-880S
MRF6S24140HS IC MOSFET RF N-CHAN NI-880S
MRF6S27015NR1 IC MOSFET RF N-CHAN TO270-2
MRF6S27050HSR5 IC MOSFET RF N-CHAN NI-780S
MRF6S27085HSR5 MOSFET RF N-CHAN 28V 20W NI-780S
相关代理商/技术参数
参数描述
MRF6S23100HXX 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Dield Effect Transistors
MRF6S23140H_V2 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6S23140HR3 功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 28W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S23140HR5 功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 28W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S23140HSR3 功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 28W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray