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参数资料
| 型号： | MRF6V14300HSR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 10/10页 |
| 文件大小： | 637K |
| 描述： | MOSFET RF N-CH 50V NI780S |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS |
| 频率： | 1.4GHz |
| 增益： | 18dB |
| 电压 - 测试： | 50V |
| 额定电流： | 10µA |
| 电流 - 测试： | 150mA |
| 功率 - 输出： | 330W |
| 电压 - 额定： | 100V |
| 封装/外壳： | NI-780S |
| 供应商设备封装： | NI-780S |
| 包装： | 带卷 (TR) |
MRF6V14300HR3 MRF6V14300HSR3
9
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
?
Electromigration MTTF Calculator
?
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the Software &
Tools tab on the part?s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2008
?
Initial Release of Data Sheet
1
Oct. 2008
?
Added footnote to describe the formula used to calculate values for Min and Typ Drain Efficiency in the
Functional Test table, p. 2
?
Updated Fig. 4, Safe Operating Area, to show additional curves for 270 W and 300 W output power, p. 5
?
Added Fig. 12, MTTF versus Junction Temperature, p. 6
2
Nov. 2008
?
Changed ?multiply by? symbol to ?divide by? symbol in
the Functional Test Drain Efficiency formula
footnote, p. 2
3
Apr. 2010
?
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
?Continuous use at maximum temperature will affect MTTF? footnote added, p. 1
?
Reporting of pulsed thermal data now shown using the ZθJC
symbol,p.1
?
Added Electromigration MTTF Calculator and RF High
Power Model availability to Product Software, p. 9
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6V14300HSR5 | 功能描述:射频MOSFET电源晶体管 VHV6 1400MHZ 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V14300MSR5 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF6V2010GNR1 | 功能描述:射频MOSFET电源晶体管 VHV6 10W TO270-2GN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V2010GNR5 | 功能描述:射频MOSFET电源晶体管 VHV6 10W TO270-2GN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V2010N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
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