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| 型号： | MRF6V14300HSR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 4/10页 |
| 文件大小： | 637K |
| 描述： | MOSFET RF N-CH 50V NI780S |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS |
| 频率： | 1.4GHz |
| 增益： | 18dB |
| 电压 - 测试： | 50V |
| 额定电流： | 10µA |
| 电流 - 测试： | 150mA |
| 功率 - 输出： | 330W |
| 电压 - 额定： | 100V |
| 封装/外壳： | NI-780S |
| 供应商设备封装： | NI-780S |
| 包装： | 带卷 (TR) |
MRF6V14300HR3 MRF6V14300HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6V14300HR3(HSR3) Test Circuit Schematic
Z13 0.110″
x 0.866″
Microstrip
Z14 0.630″
x 0.866″
Microstrip
Z15 0.307″
x 0.470″
Microstrip
Z16 0.045″
x 0.221″
Microstrip
Z17 0.171″
x 0.136″
Microstrip
Z18 0.120″
x 0.430″
Microstrip
Z19 0.964″
x 0.136″
Microstrip
Z20 0.177″
x 0.078″
Microstrip
Z21 0.215″
x 0.078″
Microstrip
Z22 1.577″
x 0.070″
Microstrip
Z23 1.459″
x 0.070″
Microstrip
PCB Arlon CuClad 250GX--0300--55--22, 0.030″,
εr
=2.55
Z1 0.205″
x 0.080″
Microstrip
Z2 0.721″
x 0.022″
Microstrip
Z3 0.080″
x 0.104″
Microstrip
Z4 0.128″
x 0.022″
Microstrip
Z5 0.062″
x 0.134″
Microstrip
Z6 0.440″
x 0.022″
Microstrip
Z7 0.262″
x 0.496″
Microstrip
Z8 0.030″
x 0.138″
Microstrip
Z9 0.256″
x 0.028″
Microstrip
Z10 0.058″
x 0.254″
Microstrip
Z11 0.344″
x 0.087″
Microstrip
Z12 0.110″
x 0.087″
Microstrip
INPUT
Z1
RF
C1
Z2
Z4
DUT
C2
RF
OUTPUTZ21
VBIAS
VSUPPLY
C9
C3
C5
C6
+
R1
Z3
C7
+
Z5
+
C8
C4
Z12
Z10
Z11
Z9
Z19
Z20
Z18
Z16
Z17
Z14
Z15
Z13
Z8
Z7
Z6
Z22
Z23
Table 5. MRF6V14300HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
43 pF Chip Capacitor
ATC100B430JT500XT
ATC
C2
18 pF Chip Capacitor
ATC100B180JT500XT
ATC
C3
33 pF Chip Capacitor
ATC100B330JT500XT
ATC
C4
27 pF Chip Capacitor
ATC100B270JT500XT
ATC
C5
2.2
μF, 100 V Chip Capacitor
2225X7R225KT3AB
ATC
C6
470
μF, 63 V Electrolytic Capacitor
EMVY630GTR471MMH0S
Multicomp
C7
330 pF, 63 V Electrolytic Capacitor
EMVY630GTR331MMH0S
Multicomp
C8
0.1
μF, 35 V Chip Capacitor
CDR33BX104AKYS
Kemet
C9
10
μF, 35 V Tantalum Capacitor
T491D106K035AT
Kemet
R1
10
?, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6V14300HSR5 | 功能描述:射频MOSFET电源晶体管 VHV6 1400MHZ 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V14300MSR5 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF6V2010GNR1 | 功能描述:射频MOSFET电源晶体管 VHV6 10W TO270-2GN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V2010GNR5 | 功能描述:射频MOSFET电源晶体管 VHV6 10W TO270-2GN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V2010N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
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