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参数资料
| 型号： | MRF6V14300HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 3/10页 |
| 文件大小： | 637K |
| 描述： | MOSFET RF N-CH 50V NI780S |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 1.4GHz |
| 增益： | 18dB |
| 电压 - 测试： | 50V |
| 额定电流： | 10µA |
| 电流 - 测试： | 150mA |
| 功率 - 输出： | 330W |
| 电压 - 额定： | 100V |
| 封装/外壳： | NI-780S |
| 供应商设备封装： | NI-780S |
| 包装： | 带卷 (TR) |
2
RF Device Data
Freescale Semiconductor
MRF6V14300HR3 MRF6V14300HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
10
μAdc
Drain--Source Breakdown Voltage
(VGS
=0Vdc,ID
= 100 mA)
V(BR)DSS
100
?
?
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS
=50Vdc,VGS
=0Vdc)
IDSS
?
?
50
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
=90Vdc,VGS
=0Vdc)
IDSS
?
?
2.5
mA
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 662
μAdc)
VGS(th)
0.9
1.6
2.4
Vdc
Gate Quiescent Voltage
(VDD
=50Vdc,ID
= 150 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.4
3
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=1.63Adc)
VDS(on)
?
0.26
?
Vdc
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
?
0.6
?
pF
Output Capacitance
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Coss
?
350
?
pF
Input Capacitance
(VDS
=50Vdc,VGS
=0Vdc±
30 mV(rms)ac @ 1 MHz)
Ciss
?
330
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) VDD
=50Vdc,IDQ
= 150 mA, Pout
= 330 W Peak (39.6 W Avg.), f = 1400 MHz,
Pulsed, 300
μsec Pulse Width, 12% Duty Cycle
Power Gain
Gps
16.5
18
19.5
dB
Drain Efficiency
ηD
59(2)
60.5(2)
?
%
Input Return Loss
IRL
?
-- 1 2
-- 9
dB
Pulsed RF Performance
(In Freescale Application Test Fixture, 50 ohm system) VDD
=50Vdc,IDQ
= 150 mA, Pout
= 330 W Peak
(39.6 W Avg.), f1 = 1200 MHz, f2 = 1300 MHz and f3 = 1400 MHz, Pulsed, 300
μsec Pulse Width, 12% Duty Cycle, tr
=50ns
Relative Insertion Phase
|?Φ|
?
10
?
°
Gain Flatness
GF
?
0.5
?
dB
Pulse Amplitude Droop
Drp
?
0.3
?
dB
Harmonic 2nd and 3rd
H2 & H3
?
-- 2 0
?
dBc
Spurious Response
?
-- 6 5
?
dBc
Load Mismatch Stability
(VSWR = 3:1 at all Phase Angles)
VSWR--S
All Spurs Below --60 dBc
Load Mismatch Tolerance
(VSWR = 5:1 at all Phase Angles)
VSWR--T
No Degradation in Output Power
1. Part internally matched both on input and output.
2. Drain efficiency is calculated by:
ηD
=
100
×
Pout
VDD
×
Ipeak
where: Ipeak
=(IAVG
-- IDQ) / Duty Cycle (%) + IDQ.
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相关代理商/技术参数 |
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| MRF6V14300MSR5 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF6V2010GNR1 | 功能描述:射频MOSFET电源晶体管 VHV6 10W TO270-2GN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V2010GNR5 | 功能描述:射频MOSFET电源晶体管 VHV6 10W TO270-2GN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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