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参数资料
| 型号： | MRF6V14300HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 6/10页 |
| 文件大小： | 637K |
| 描述： | MOSFET RF N-CH 50V NI780S |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 1.4GHz |
| 增益： | 18dB |
| 电压 - 测试： | 50V |
| 额定电流： | 10µA |
| 电流 - 测试： | 150mA |
| 功率 - 输出： | 330W |
| 电压 - 额定： | 100V |
| 封装/外壳： | NI-780S |
| 供应商设备封装： | NI-780S |
| 包装： | 带卷 (TR) |
MRF6V14300HR3 MRF6V14300HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
40 1050
28612141618
0.1
1000
02010
30
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
Ciss
0
160
0
VDD
=50Vdc,IDQ
= 150 mA
f = 1200 MHz, Pulse Width = 300
μsec
4
100
DUTY CYCLE (%)
Figure 4. Safe Operating Area
MAXIMUM OPERATING T
case
(
°
C)
10
1
Coss
Crss
Measured with
±30 mV(rms)ac @ 1 MHz
VGS
=0Vdc
100
24
50
25
100
22
20
65
55
45
35
Pout, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
η
D,
DRAIN EFFICIENCY (%)
ηD
16
400
Gps
47
59
27
55
54
53
Pin, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Output Power versus
Input Power
56
52
51
50
49
29 31 33 35 37 39
P
out
, OUTPUT POWER (dBm)
P3dB = 55.30 dBm (339 W)
Actual
Ideal
P1dB = 54.77 dBm (300 W)
17
22
50
21
Pout, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
G
ps
, POWER GAIN (dB)
100
20
300 mA
IDQ
= 600 mA
400
450 mA
Figure 8. Pulsed Power Gain versus
Output Power
Pout, OUTPUT POWER (WATTS) PULSED
G
ps
, POWER GAIN (dB)
VDD
=30V
15
22
50
16
21
35 V
20
45 V
40 V
100 400
50 V
48
18
19
18
150 mA
19
18
17
VDD
=50Vdc,IDQ
= 150 mA, f = 1400 MHz
Pulse Width = 300
μsec, Duty Cycle = 12%
IDQ
= 150 mA, f = 1400 MHz
Pulse Width = 300
μsec
Duty Cycle = 12%
VDD
=50Vdc,IDQ
= 150 mA, f = 1400 MHz
Pulse Width = 300
μsec, Duty Cycle = 12%
VDD
= 50 Vdc, f = 1400 MHz
Pulse Width = 300
μsec, Duty Cycle = 12%
20
57
58
140
120
80
60
40
20
Pout
= 330 W
Pout
= 270 W
Pout
= 300 W
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相关代理商/技术参数 |
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|---|---|
| MRF6V14300MSR5 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF6V2010GNR1 | 功能描述:射频MOSFET电源晶体管 VHV6 10W TO270-2GN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V2010GNR5 | 功能描述:射频MOSFET电源晶体管 VHV6 10W TO270-2GN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V2010N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6V2010N_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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